CAPACITOR AND METHOD FOR MANUFACTURING CAPACITOR

专利名称：CAPACITOR AND METHOD FOR

MANUFACTURING CAPACITOR

发明人：Hiroshi Kagata,Masayuki Hogiri申请号：US13377212申请日：20100608

公开号：US20120087059A1公开日：20120412

专利附图：

摘要：A capacitor includes a substrate made of an organic film, a first conductive layerprovided on an upper surface of the substrate, a first dielectric layer provided on anupper surface of the first conductive layer, a second dielectric layer provided on an upper

surface of the first dielectric layer, and a second conductive layer provided on an uppersurface of the second dielectric layer. The first dielectric layer is made of plural metaloxide chips spread over on the upper surface of the first conductive layer. The seconddielectric layer is made of plural metal oxide chips spread over on a lower surface of thesecond conductive layer. This capacitor can have a large capacitance.

申请人：Hiroshi Kagata,Masayuki Hogiri

地址：Osaka JP,Osaka JP

国籍：JP,JP

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