Process of fabricating semiconductor device with l

专利名称：Process of fabricating semiconductor device

with low capacitance for high-frequencycircuit protection

发明人：Jerry Hu,Panchien Lin,Bert Huang申请号：US13036582申请日：20110228公开号：US08501580B2公开日：20130806

专利附图：

摘要：A process for fabricating a semiconductor device includes depositing n-typedopant on a p-type substrate, implanting n-type material into the substrate, and growing

an n-type epitaxial layer atop the n+ layer. Trenches surrounding the device region areformed and an n+ layer on the sidewalls of the trenches is formed. The trenches arefilled by growing a layer of thermal oxide on the sidewalls of the trenches and depositionof plasma enhanced oxide or polysilicon into the trenches, and planarizing the topsurface. n+ region of the device is formed by forming an oxide layer on the top surface ofthe device layer and etching the oxide, depositing n-type dopant material and driving inby high temperature diffusion. p+ region of the device is formed by etching the oxide,depositing p-type dopant material and driving in by high temperature diffusion so thatthe breakdown voltage is set for circuit protection.

申请人：Jerry Hu,Panchien Lin,Bert Huang

地址：Taipei TW,Hsinchu TW,Hsinchu TW

国籍：TW,TW,TW

代理机构：Arent Fox LLP

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