Methods of forming capacitors with high dielectric

专利名称：Methods of forming capacitors with high

dielectric layers and capacitors so formed

发明人：Seung-hwan Lee,Jae-dong Byun,Sung-tae

Kim,Young-sun Kim,Dal-won Lee,Song-wonKo

申请号：US11002571申请日：20041202公开号：US07179704B2公开日：20070220

专利附图：

摘要：Methods of forming a capacitor of a semiconductor device can include forming a

lower electrode of a capacitor on a semiconductor substrate and forming a dielectricmaterial layer of Ba(TiSn)O(BTS) or Ba(TiZr)O(BTZ) on the lower electrode. An amorphouslayer can be formed on the dielectric material layer. An upper electrode of the capacitorcan be formed on the amorphous layer.

申请人：Seung-hwan Lee,Jae-dong Byun,Sung-tae Kim,Young-sun Kim,Dal-wonLee,Song-won Ko

地址：Seoul KR,Seoul KR,Seoul KR,Gyeonggi-do KR,Seoul KR,Seoul KR

国籍：KR,KR,KR,KR,KR,KR

代理机构：Myers Bigel Sibley & Sajovec, PA

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