irfp260n

HEXFET® Power MOSFET

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Advanced Process TechnologyDynamic dv/dt Rating

175°C Operating TemperatureFast Switching

Fully Avalanche RatedEase of Paralleling

Simple Drive Requirements

DVDSS = 200VRDS(on) = 0.04ΩGSID = 50ADescription

Fifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design thatHEXFET Power MOSFETs are well known for, provides the designer with anextremely efficient and reliable device for use in a wide variety of applications.The TO-247 package is preferred for commercial-industrial applications wherehigher power levels preclude the use of TO-220 devices. The TO-247 is similarbut superior to the earlier TO-218 package because of its isolated mounting hole.TO-247ACAbsolute Maximum Ratings

Parameter

ID @ TC = 25°CID @ TC = 100°CIDM

PD @TC = 25°CVGSEASIAREARdv/dtTJTSTG

Continuous Drain Current, VGS @ 10VContinuous Drain Current, VGS @ 10VPulsed Drain Current 󰂁Power DissipationLinear Derating FactorGate-to-Source Voltage

Single Pulse Avalanche Energy󰂂Avalanche Current󰂁Repetitive Avalanche Energy󰂁Peak Diode Recovery dv/dt 󰂃Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 secondsMounting torque, 6-32 or M3 srew

Max.

50352003002.0 ±20560503010

-55 to +175300 (1.6mm from case )10 lbf•in (1.1N•m)

Units

AWW/°CVmJAmJV/ns°C

Thermal Resistance

Parameter

RθJCRθCSRθJA

Junction-to-Case

Case-to-Sink, Flat, Greased SurfaceJunction-to-Ambient

Typ.

–––0.24–––

Max.

0.50–––40

Units

°C/W

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10/11/00

IRFP260N

IRFP260N

IRFP260N

IRFP260N

IRFP260N

IRFP260N

IRFP260N

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