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ucc27211(MOSFET驱动器)

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UCC27210UCC27211

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SLUSAT7E–NOVEMBER2011–REVISEDAUGUST2013

120-VBoot,4-APeak,HighFrequencyHigh-SideandLow-SideDriver

CheckforSamples:UCC27210,UCC27211

FEATURES

DrivesTwoN-ChannelMOSFETsinHigh-SideandLow-SideConfigurationwithIndependentInputs

MaximumBootVoltage120-VDC

4-ASink,4-ASourceOutputCurrents0.9-ΩPull-UpandPull-DownResistance

InputPinscanTolerate-10Vto20VandareIndependentofSupplyVoltageRangeTTLorPseudo-CMOSCompatibleInputVersions

8-Vto17-VVDDOperatingRange,(20-VABSMAX)

7.2-nsRiseand5.5-nsFallTimewith1000-pFLoad

FastPropagationDelayTimes(18nstypical)2-nsDelayMatching

SymmetricalUnderVoltageLockoutforHigh-SideandLow-SideDriver

AllIndustryStandardPackagesAvailable(SOIC-8,PowerPAD™SOIC-8,4-mmx4-mmSON-8and4-mmx4-mmSON-10)Specifiedfrom-40to140°C

APPLICATIONS

•••••••

PowerSuppliesforTelecom,Datacom,andMerchant

Half-BridgeandFull-BridgeConvertersPush-PullConverters

HighVoltageSynchronous-BuckConvertersTwo-SwitchForwardConvertersActive-ClampForwardConvertersClass-DAudioAmplifiers

•••••••••••

DESCRIPTION

TheUCC27210andUCC27211DriversarebasedonthepopularUCC27200andUCC27201MOSFETdrivers,butofferseveralsignificantperformanceimprovements.Peakoutputpull-upandpull-downcurrenthasbeenincreasedto4-Asourceand4-Asink,andpull-upandpull-downresistancehavebeenreducedto0.9Ω,therebyallowingfordrivinglargepowerMOSFETswithminimizedswitchinglossesduringthetransitionthroughtheMOSFET’sMillerPlateau.Theinputstructureisnowabletodirectlyhandle-10VDC,whichincreasesrobustnessandalsoallowsdirectinterfacetogate-drivetransformerswithoutusingrectificationdiodes.Theinputsarealsoindependentofsupplyvoltageandhavea20-Vmaximumrating.

TypicalApplicationDiagrams

+12V+100V+12VVHBSECONDARYSIDECIRCUITVHB+100VSECONDARYSIDECIRCUITCONTROLPWMCONTROLLERLIHSPWMCONTROLLERLICONTROLHIDRIVEHIHOHIDRIVEHIHOHSDRIVELOUCC27210VSSLODRIVELOUCC27211VSSLOISOLATIONANDFEEDBACK+12VVDDHB+100VHICONTROLDRIVEHIHOHSLIDRIVELOUCC27211LOPleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.

PowerPADisatrademarkofTexasInstruments.

Copyright©2011–2013,TexasInstrumentsIncorporated

PRODUCTIONDATAinformationiscurrentasofpublicationdate.ProductsconformtospecificationsperthetermsoftheTexasInstrumentsstandardwarranty.Productionprocessingdoesnotnecessarilyincludetestingofallparameters.

UCC27210UCC27211

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DESCRIPTION(CONT.)

TheUCC27210/1’sswitchingnode(HSpin)isabletohandle-18Vmaximumwhichallowsthehigh-sidechanneltobeprotectedfrominherentnegativevoltagescausedparasiticinductanceandstraycapacitance.TheUCC27210(Pseudo-CMOSinputs)andUCC27211(TTLinputs)haveincreasedhysteresisallowingforinterfacetoanalogordigitalPWMcontrollerswithenhancednoiseimmunity.

Thelow-sideandhigh-sidegatedriversareindependentlycontrolledandmatchedto2nsbetweentheturnonandturnoffofeachother.

Anon-chip120-Vratedbootstrapdiodeeliminatestheexternaldiscretediodes.Under-voltagelockoutisprovidedforboththehigh-sideandthelow-sidedriversprovidingsymmetricturn-on/turn-offbehaviorandforcingtheoutputslowifthedrivevoltageisbelowthespecifiedthreshold.

Bothdevicesareofferedin8-pinSOIC(D),PowerPAD™SOIC-8(DDA),4-mmx4-mmSON-8(DRM)andSON-10(DPR)packages.

Thesedeviceshavelimitedbuilt-inESDprotection.TheleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoamduringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates.

ORDERINGINFORMATION

TEMPERATURERANGETA=TJ

INPUT

COMPATIBILITYPseudoCMOS

TTL

SOIC-8(D)(2)UCC27210DUCC27211D

(1)

PACKAGEDDEVICES(1)

PowerPAD™SOIC-8(DDA)(2)UCC27210DDAUCC27211DDA

SON-8(DRM)(3)UCC27210DRMUCC27211DRM

SON-10(DPR)(4)UCC27210DPRUCC27211DPR

-40°Cto140°C

(1)(2)(3)(4)

TheseproductsarepackagedinLead(Pb)-FreeandgreenleadfinishofPdNiAuwhichiscompatiblewithMSLlevel1at255°Cto260°CpeakreflowtemperaturetobecompatiblewitheitherleadfreeorSn/Pbsolderingoperations.

D(SOIC-8)andDDA(PowerPad™SOIC-8)packagesareavailabletapedandreeled.AddRsuffixtodevicetype(e.g.UCC27210ADR/UCC27211ADR)toorderquantitiesof2,500devicesperreel.

DRM(SON-8)packagecomeseitherinasmallreelof250piecesaspartnumberUCC27210ADRMT/UCC27211ADRMT,orlargerreelsof3000piecesaspartnumberUCC27210ADRMR/UCC27211ADRMR.

DPR(SON-10)packagecomeseitherinasmallreelof250piecesaspartnumberUCC27210ADPRT/UCC27211ADPRT,orlargereelsof3000piecesaspartnumberUCC27210ADPRR/UCC27211ADPRR.

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ABSOLUTEMAXIMUMRATINGS

overoperatingfree-airtemperaturerange(unlessotherwisenoted)

MIN

Supplyvoltagerange,VDD(1),VHB-VHSInputvoltagesonLIandHI,VLI,VHIOutputvoltageonLO,VLOOutputvoltageonHO,VHOVoltageonHS,VHSVoltageonHB,VHB

HumanBodyModel(HBM)

ESD

FieldInducedChargedDeviceModel(FICDM)

-40-65

DC

Repetitivepulse<100ns(2)DC

Repetitivepulse<100ns(2)DC

Repetitivepulse<100ns

(2)

MAX

-0.3-10-0.3-2

2020

VDD+0.3VDD+0.3VHB+0.3VHB+0.3

11511512021150150300

UNIT

VHS–0.3VHS-2

-1

-(24V-VDD)

-0.3

V

kV

Operatingvirtualjunctiontemperaturerange,TJStoragetemperature,TSTG

Leadtemperature(soldering,10sec.)(1)(2)

°C

AllvoltagesarewithrespecttoVSSunlessotherwisenoted.Currentsarepositiveinto,negativeoutofthespecifiedterminal.Verifiedatbenchcharacterization.VDDisthevalueusedinanapplicationdesign.

RECOMMENDEDOPERATINGCONDITIONS

allvoltagesarewithrespecttoVSS;currentsarepositiveintoandnegativeoutofthespecifiedterminal.–40°CPARAMETER

Supplyvoltagerange,VDD,VHB-VHSVoltageonHS,VHS

VoltageonHS,VHS(repetitivepulse<100ns)VoltageonHB,VHBVoltageslewrateonHS

Operatingjunctiontemperaturerange

-40MIN

8-1

-(24V-VDD)

VHS+8,VDD–1

TYP

12

MAX

17105110VHS+17,

115

50140

V/ns°CVUNIT

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THERMALINFORMATION

UCC27210/11(1)

THERMALMETRIC

θJAθJCtopθJBψJTψJBθJCbot(1)(2)(3)(4)(5)(6)(7)

Junction-to-ambientthermalresistance(2)Junction-to-case(top)thermalresistance(3)Junction-to-boardthermalresistance(4)Junction-to-topcharacterizationparameter(5)Junction-to-boardcharacterizationparameter(6)Junction-to-case(bottom)thermalresistance(7)

D8PINS111.856.953.07.852.3n/a

DDA8PINS37.747.29.62.89.43.6

°C/WUNITS

Formoreinformationabouttraditionalandnewthermalmetrics,seetheICPackageThermalMetricsapplicationreport,SPRA953.

Thejunction-to-ambientthermalresistanceundernaturalconvectionisobtainedinasimulationonaJEDEC-standard,high-Kboard,asspecifiedinJESD51-7,inanenvironmentdescribedinJESD51-2a.

Thejunction-to-case(top)thermalresistanceisobtainedbysimulatingacoldplatetestonthepackagetop.NospecificJEDEC-standardtestexists,butaclosedescriptioncanbefoundintheANSISEMIstandardG30-88.

Thejunction-to-boardthermalresistanceisobtainedbysimulatinginanenvironmentwitharingcoldplatefixturetocontrolthePCBtemperature,asdescribedinJESD51-8.

Thejunction-to-topcharacterizationparameter,ψJT,estimatesthejunctiontemperatureofadeviceinarealsystemandisextractedfromthesimulationdataforobtainingθJA,usingaproceduredescribedinJESD51-2a(sections6and7).

Thejunction-to-boardcharacterizationparameter,ψJB,estimatesthejunctiontemperatureofadeviceinarealsystemandisextractedfromthesimulationdataforobtainingθJA,usingaproceduredescribedinJESD51-2a(sections6and7).

Thejunction-to-case(bottom)thermalresistanceisobtainedbysimulatingacoldplatetestontheexposed(power)pad.NospecificJEDECstandardtestexists,butaclosedescriptioncanbefoundintheANSISEMIstandardG30-88.THERMALINFORMATION

UCC27210/11(1)

THERMALMETRIC

θJAθJCtopθJBψJTψJBθJCbot(1)(2)(3)(4)(5)(6)(7)

Junction-to-ambientthermalresistance(2)Junction-to-case(top)thermalresistanceJunction-to-boardthermalresistance

(4)

(5)(3)

DRM8PINS33.933.211.40.411.72.3

(7)

DPR10PINS36.836.014.00.314.23.4

UNITS

Junction-to-topcharacterizationparameter

°C/W

Junction-to-boardcharacterizationparameter(6)Junction-to-case(bottom)thermalresistance

Formoreinformationabouttraditionalandnewthermalmetrics,seetheICPackageThermalMetricsapplicationreport,SPRA953.

Thejunction-to-ambientthermalresistanceundernaturalconvectionisobtainedinasimulationonaJEDEC-standard,high-Kboard,asspecifiedinJESD51-7,inanenvironmentdescribedinJESD51-2a.

Thejunction-to-case(top)thermalresistanceisobtainedbysimulatingacoldplatetestonthepackagetop.NospecificJEDEC-standardtestexists,butaclosedescriptioncanbefoundintheANSISEMIstandardG30-88.

Thejunction-to-boardthermalresistanceisobtainedbysimulatinginanenvironmentwitharingcoldplatefixturetocontrolthePCBtemperature,asdescribedinJESD51-8.

Thejunction-to-topcharacterizationparameter,ψJT,estimatesthejunctiontemperatureofadeviceinarealsystemandisextractedfromthesimulationdataforobtainingθJA,usingaproceduredescribedinJESD51-2a(sections6and7).

Thejunction-to-boardcharacterizationparameter,ψJB,estimatesthejunctiontemperatureofadeviceinarealsystemandisextractedfromthesimulationdataforobtainingθJA,usingaproceduredescribedinJESD51-2a(sections6and7).

Thejunction-to-case(bottom)thermalresistanceisobtainedbysimulatingacoldplatetestontheexposed(power)pad.NospecificJEDECstandardtestexists,butaclosedescriptioncanbefoundintheANSISEMIstandardG30-88.4SubmitDocumentationFeedbackCopyright©2011–2013,TexasInstrumentsIncorporated

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ELECTRICALCHARACTERISTICS

VDD=VHB=12V,VHS=VSS=0V,noloadonLOorHO,TA=TJ=-40°Cto140°C,(unlessotherwisenoted)

PARAMETERSupplyCurrentsIDDIDDOIHBIHBOIHBSIHBSOInputVHITVLITVIHYSRINVHITVLITVIHYSRINVDDRVDDHYSVHBRVHBHYSVFVFIRDVLOLVLOH

InputvoltagethresholdInputvoltagethresholdInputvoltagehysteresisInputpulldownresistanceInputvoltagethresholdInputvoltagethresholdInputvoltagehysteresisInputpulldownresistanceVDDturn-onthreshold

DDAonly

Hysteresis

VHBturn-onthreshold

DDAonly

Hysteresis

Low-currentforwardvoltageHigh-currentforwardvoltageDynamicresistance,ΔVF/ΔILow-leveloutputvoltageHighleveloutputvoltagePeakpull-upcurrent(1)Peakpull-downcurrent(1)

HOGATEDriverVHOLVHOH

Low-leveloutputvoltageHigh-leveloutputvoltagePeakpull-upcurrent(1)Peakpull-downcurrent(1)

(1)

Ensuredbydesign.

IHO=100mA

IHO=-100mA,VHOH=VHB-VHOVHO=0VVHO=12V

0.050.1

0.090.163.74.5

0.190.29

VA

IVDD-HB=100µAIVDD-HB=100mA

IVDD-HB=100mAand80mAILO=100mA

ILO=-100mA,VLOH=VDD-VLOVLO=0VVLO=12V

0.30.050.1

BootstrapDiode

0.650.850.50.090.163.74.5

0.80.950.850.190.29

5.65.3

UCC27210

UCC27210(DDAonly)UCC27210

UCC27210(DDAonly)UCC27210UCC27211

UCC27211(DDAonly)UCC27211

UCC27211(DDAonly)UCC27211

1.91.91.31.34.24.22.42.4

5.05.03.23.21.81022.32.31.61.670068

6.25.8

7.07.00.56.76.71.1

7.98.07.88.1

V

2.72.81.92.1

mVkΩVkΩ

5.85.94.04.0

V

VDDquiescentcurrentVDDoperatingcurrent

UCC27210UCC27211

V(LI)=V(HI)=0Vf=500kHz,CLOAD=0V(LI)=V(HI)=0Vf=500kHz,CLOAD=0V(HS)=V(HB)=115Vf=500kHz,CLOAD=0

0.0150.05

0.0852.62.50.0652.50.00050.07

0.175.25.20.15.01.01.2

µAmAmA

TESTCONDITION

MIN

TYP

MAX

UNITS

BootvoltagequiescentcurrentBootvoltageoperatingcurrentHBtoVSSquiescentcurrentHBtoVSSoperatingcurrent

Under-VoltageLockout(UVLO)

LOGateDriver

VA

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ELECTRICALCHARACTERISTICS(continued)

VDD=VHB=12V,VHS=VSS=0V,noloadonLOorHO,TA=TJ=-40°Cto140°C,(unlessotherwisenoted)

PARAMETER

SwitchingParameters:PropagationDelaysTDLFFTDHFFTDLRRTDHRRTDLFFTDHFFTDLRRTDHRR

VLIfallingtoVLOfallingVHIfallingtoVHOfallingVLIrisingtoVLOrisingVHIrisingtoVHOrisingVLIfallingtoVLOfallingVHIfallingtoVHOfallingVLIrisingtoVLOrisingVHIrisingtoVHOrising

TJ=25°C

UCC27210

TMOFFTMONTMOFF

FromLOOFFtoHOONFromHOOFFtoLOON

UCC27211

FromLOOFFtoHOON

TJ=–40°Cto140°CTJ=25°C

TJ=–40°Cto140°CTJ=25°C

TJ=–40°Cto140°CTJ=25°C

TJ=–40°Cto140°CUCC27211,CLOAD=0UCC27210,CLOAD=0

1515151510101010

2121242417171818333322227.27.25.55.50.360.15

0.60.4

µsns

3737464630304040111411149.5149.514

ns

TESTCONDITION

MIN

TYP

MAX

UNITS

SwitchingParameters:DelayMatchingTMON

FromHOOFFtoLOON

nsnsnsns

SwitchingParameters:OutputRiseandFallTimetRtRtFtFtRtF

LOrisetimeHOrisetimeLOfalltimeHOfalltimeLO,HOLO,HO

Minimuminputpulsewidththatchangestheoutput

Bootstrapdiodeturn-offtime

(2)(3)(4)

(2)(3)

CLOAD=1000pF,from10%to90%CLOAD=1000pF,from90%to10%CLOAD=0.1µF,(3Vto9V)CLOAD=0.1µF,(9Vto3V)

SwitchingParameters:Miscellaneous

50

IF=20mA,IREV=0.5A

(4)

ns

20

Ensuredbydesign.

IF:Forwardcurrentappliedtobootstrapdiode,IREV:Reversecurrentappliedtobootstrapdiode.TypicalvaluesforTA=25°C.

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TimingDiagrams

LI

Input(HI,LI)

TDLRR,TDHRRHI

LO

Output(HO,LO)TDLFF,TDHFFHOTMON

TMOFF

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DEVICEINFORMATION

FunctionalBlockDiagram

2UVLOLEVELSHIFT53HB

HOHS

4HI

VDD

1UVLO8LOVSS

LI

67SOIC-8(D)TOPVIEW

PowerPadTMSOIC-8(DDA)

TOPVIEW

VDD

18LOVDD

1ExposedThermalDiePad8LO

HB

27VSSHB

27VSS

HO

36LIHO

36LI

HS

45HIHS

45HI

SON-8(DRM)TOPVIEW

VDD1ExposedThermalDiePad*8LO

VDDHB

1

SON-10 (DPR)TOPVIEW

10

LOVSSLIHINC

HB229

7VSS

HO

3

8

HO36LI

HS

4

7

HS45HI

NC56

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TERMINALFUNCTIONS

PINNAMEVDD

PIN

D/DDA/DRM

1

DPR1

DESCRIPTION

Positivesupplytothelower-gatedriver.De-couplethispintoVSS(GND).Typicaldecouplingcapacitorrangeis0.22µFto4.7µF(See(1)).

High-sidebootstrapsupply.Thebootstrapdiodeison-chipbuttheexternalbootstrapcapacitorisrequired.Connectpositivesideofthebootstrapcapacitortothispin.TypicalrangeofHBbypasscapacitoris0.022µFto0.1µF.Thecapacitorvalueisdependantonthegatechargeofthehigh-sideMOSFETandshouldalsobeselectedbasedonspeedandripplecriteria

High-sideoutput.Connecttothegateofthehigh-sidepowerMOSFET.High-sidesourceconnection.Connecttosourceofhigh-sidepowerMOSFET.Connectthenegativesideofbootstrapcapacitortothispin.High-sideinput.(2)Low-sideinput.(2)

Negativesupplyterminalforthedevicewhichisgenerallygrounded.Low-sideoutput.Connecttothegateofthelow-sidepowerMOSFET.NotConnected.

UtilizedontheDDA,DRMandDPRpackagesonly.ElectricallyreferencedtoVSS(GND).ConnecttoalargethermalmasstraceorGNDplanetodramaticallyimprovethermalperformance.

HB22

HOHSHILIVSSLON/CPowerPAD™(3)(1)(2)

345678-Pad

34789105/6Pad

(3)

Forcoldtemperatureapplicationswerecommendtheuppercapacitancerange.AttentionshouldalsobemadetoPCBlayout-seeLayoutRecommendations.

HIorLIinputisassumedtoconnecttoalowimpedancesourcesignal.Thesourceoutputimpedanceisassumedlessthan100Ω.Ifthesourceimpedanceisgreaterthan100Ω,addabypassingcapacitor,each,betweenHIandVSSandbetweenLIandVSS.Theaddedcapacitorvaluedependsonthenoiselevelspresentedonthepins,typicallyfrom1nFto10nFshouldbeeffectivetoeliminatethepossiblenoiseeffect.Whennoiseispresentontwopins,HIorLI,theeffectistocauseHOandLOmalfunctionstohavewronglogicoutputs.

ThePowerPAD™isnotdirectlyconnectedtoanyleadsofthepackage.Howeveritiselectricallyandthermallyconnectedtothesubstratewhichisthegroundofthedevice.

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TYPICALCHARACTERISTICS

QUIESCENTCURRENT

vs

SUPPLYVOLTAGET = 25°C80

IDDO − Operating Current (mA)10

100IDD, IHB − Quiescent Current (µA)100

UCC27210IDDOPERATINGCURRENT

vs

FREQUENCYUCC27210, VDD = 12V60

1

CL=0pF, T=−40°CCL=0pF, T=25°CCL=0pF, T=140°CCL=1000pF, T=25°CCL=1000pF, T=140°CCL=4700pF, T=140°C10

100

Frequency (kHz)

1000

G002

40

20

UCC27210/1 IDDUCC27210/1 IHB00

2

4

6810121416VDD = VHB − Supply Voltage (V)

18

20

G001

0.1

0.01

Figure1.

UCC27211IDDOPERATINGCURRENT

vs

FREQUENCY

UCC27211, VDD = 12VIDDO − Operating Current (mA)10

IHBO − Operating Current (mA)10

Figure2.

BOOTVOLTAGEOPERATINGCURRENT

vs

FREQUENCY(HBtoHS)

UCC27210/1, VHB − VHS = 12V100100

1

CL=0pF, T=−40°CCL=0pF, T=25°CCL=0pF, T=140°CCL=1000pF, T=25°CCL=1000pF, T=140°CCL=4700pF, T=140°C10

100

Frequency (kHz)

1000

G003

1

CL=0pF, T=−40°CCL=0pF, T=25°CCL=0pF, T=140°CCL=1000pF, T=25°CCL=1000pF, T=140°CCL=4700pF, T=140°C10

100

Frequency (kHz)

1000

G004

0.10.1

0.010.01

Figure3.

UCC27210/11INPUTTHRESHOLD

vs

SUPPLYVOLTAGE

HI, LI − Input Threshold Voltage (V)T = 25°C543210−18UCC27210, RisingUCC27210, FallingUCC27211, RisingUCC27211, Falling1216VDD − Supply Voltage (V)

20G005

Figure4.

UCC27210/11INPUTTHRESHOLDS

vs

TEMPERATURE

VDD = 12V543210−1−40−200UCC27210, RisingUCC27210, FallingUCC27211, RisingUCC27211, Falling20406080Temperature (°C)

100120140G006

6

HI, LI − Input Threshold Voltage (V)6

Figure5.Figure6.

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TYPICALCHARACTERISTICS(continued)

0.32VOH − LO/HO Output Voltage (V)0.280.240.20.160.120.080.040−40−200UCC27210/1, VDD=VHB=8VUCC27210/1, VDD=VHB=12VUCC27210/1, VDD=VHB=16VUCC27210/1, VDD=VHB=20V20406080Temperature (°C)

100120140G007

LOANDHOHIGHLEVELOUTPUTVOLTAGE

vs

TEMPERATURE

VOL − LO/HO Output Voltage (V)IHO=ILO= 100mA0.2

LOANDHOLOWLEVELOUTPUTVOLTAGE

vs

TEMPERATURE

IHO=ILO= 100mA0.16

0.12

0.08

UCC27210/1, VDD=VHB=8VUCC27210/1, VDD=VHB=12VUCC27210/1, VDD=VHB=16VUCC27210/1, VDD=VHB=20V−20020406080Temperature (°C)

100120140G008

0.04

0−40Figure7.

UNDERVOLTAGELOCKOUTTHRESHOLD

vs

TEMPERATURE

Figure8.

UNDERVOLTAGELOCKOUTTHRESHOLDHYSTERESIS

vs

TEMPERATURE

1.5

87.67.2

1.2Hysteresis (V)VDD Rising ThresholdHB Rising Threshold−20020406080Temperature (°C)

100120140G009

Threshold (V)6.86.465.65.2−400.9

0.6

0.3

VDD UVLO HysteresisHB UVLO Hysteresis0−40−20020406080Temperature (°C)

100120140G010

Figure9.

UCC27210PROPAGATIONDELAYS

vs

TEMPERATURE

UCC27210, VDD=VHB=12VPropagation Delay (ns)24

Figure10.

UCC27211PROPAGATIONDELAYS

vs

TEMPERATURE

UCC27211, VDD=VHB=12V4036Propagation Delay (ns)322824201612840−4032

16

TDLRRTDLFFTDHRRTDHFF−20020406080Temperature (°C)

100120140G011

8

TDLRRTDLFFTDHRRTDHFF−20020406080Temperature (°C)

100120140G012

0−40Figure11.Figure12.

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TYPICALCHARACTERISTICS(continued)

3228Propagation Delay (ns)2420161284081216VDD=VHB − Supply Voltage (V)

TDLRRTDLFFTDHRRTDHFF20G012

UCC27210PROPAGATIONDELAYS

vs

SUPPLYVOLTAGE

UCC27210, T=25°CPropagation Delay (ns)3228242016128408UCC27211PROPAGATIONDELAYS

vs

SUPPLYVOLTAGE

UCC27211, T=25°CTDLRRTDLFFTDHRRTDHFF1216VDD=VHB − Supply Voltage (V)

20G014

Figure13.DELAYMATCHING

vs

TEMPERATURE

VDD=VHB=12VILO, IHO − Output Current (A)8

Delay Matching (ns)6420−2−40UCC27210, TMonUCC27210, TMoffUCC27211, TMonUCC27211, TMoff−20020406080Temperature (°C)

100120140G015

Figure14.OUTPUTCURRENT

vs

OUTPUTVOLTAGE

VDD=VHB=12V4

105

3

2

1

Pull Down CurrentPull Up Current02468VLO, VHO − Output Voltage (V)

1012G016

0

Figure15.DIODECURRENT

vs

DIODEVOLTAGE

Figure16.

100

NEGATIVE10-VINPUT

10Diode Current (mA)1

0.1

0.01

0.001

500

550600

650700750Diode Voltage (mV)

800850

G017

Figure17.Figure18.

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SLUSAT7E–NOVEMBER2011–REVISEDAUGUST2013

TYPICALCHARACTERISTICS(continued)

STEPINPUT

SYMMETRICALUVLO

Figure19.Figure20.

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APPLICATIONINFORMATION

FunctionalDescription

TheUCC27210/11representTexasInstruments’latestgenerationofhighvoltagegatedriverswhicharedesignedtodriveboththehigh-sideandlow-sideofN-ChannelMOSFETsinahalf-/full-bridgeorsynchronousbuckconfiguration.Thefloatinghigh-sidedriveriscapableofoperatingwithsupplyvoltagesofupto120V.ThisallowsforN-ChannelMOSFETcontrolinhalf-bridge,full-bridge,pushpull,two-switchforwardandactiveclampforwardconverters.

TheUCC27210/11feature4-Asource/sinkcapability,industrybest-in-classswitchingcharacteristicsandahostofotherfeatureslistedinthetablebelow.Thesefeaturescombinetoensureefficient,robustandreliableoperationinhigh-frequencyswitchingpowercircuits.

Table1.UCC27210/11Highlights

FEATURE

4-Asourceandsinkcurrentwith0.9-ΩoutputresistanceInputpins(HIandLI)candirectlyhandle-10VDCupto20VDC120-Vinternalbootdiode

Switchnode(HSpin)abletohandle-18Vmaximumfor100nsRobustESDcircuitrytohandlevoltagespikes

18-nspropagationdelaywith7.2-ns/5.5-nsrise/fallTimes2-ns(typ)delaymatchingbetweenchannelsSymmetricalUVLOcircuit

CMOSoptimizedthresholdorTTLoptimizedthresholdswithincreasedhysteresis

BENEFIT

HighpeakcurrentidealfordrivinglargepowerMOSFETswithminimalpowerloss(fast-drivecapabilityatMillerplateau)Increasedrobustnessandabilitytohandleunder/overshoot.Caninterfacedirectlytogate-drivetransformerswithouthavingtouserectificationdiodes

Providesvoltagemargintomeettelecom100-VsurgerequirementsAllowsthehigh-sidechanneltohaveextraprotectionfrominherentnegativevoltagescausedparasiticinductanceandstraycapacitance.

ExcellentimmunitytolargedV/dTconditions

Best-in-classswitchingcharacteristicsandextremelylow-pulsetransmissiondistortion

Avoidstransformervolt-secondoffsetinbridge

Ensureshigh-sideandlow-sideshutdownatthesametimeComplementarytoanalogordigitalPWMcontrollers.Increasedhysteresisoffersaddednoiseimmunity

InUCC27210/11,thehighsideandlowsideeachhaveindependentinputswhichallowmaximumflexibilityofinputcontrolsignalsintheapplication.Thebootdiodeforthehigh-sidedriverbiassupplyisinternaltotheUCC27210andUCC27211.TheUCC27210isthePseudo-CMOScompatibleinputversionandtheUCC27211istheTTLorlogiccompatibleversion.Thehigh-sidedriverisreferencedtotheswitchnode(HS)whichistypicallythesourcepinofthehigh-sideMOSFETanddrainpinofthelow-sideMOSFET.Thelow-sidedriverisreferencedtoVSSwhichistypicallyground.Thefunctionscontainedaretheinputstages,UVLOprotection,levelshift,bootdiode,andoutputdriverstages.

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InputStages

TheinputstagesprovidetheinterfacetothePWMoutputsignals.TheinputimpedanceoftheUCC27210is100kΩnominalandinputcapacitanceisapproximately2pF.The100kΩisapull-downresistancetoVSS(ground).TheUCC27210Pseudo-CMOSinputstructurehasbeendesignedtoprovidelargehysteresisandatthesametimetoallowsinterfacingtoamultitudeofanalogordigitalPWMcontrollers.InsomeCMOSdesigns,theinputthresholdsaredeterminedasapercentageofVDD.Bydoingso,thehigh-levelinputthresholdcanbecomeunreasonablyhighandunusable.TheUCC27210recognizesthefactthatVDDlevelsaretrendingdownwardanditthereforeprovidesarisingthresholdwith5.0V(typ)andfallingthresholdwith3.2V(typ).TheinputhysteresisoftheUCC27210is1.8V(typ).

TheinputstagesoftheUCC27211haveimpedanceof70kΩnominalandinputcapacitanceisapproximately2pF.Pull-downresistancetoVSS(ground)is70kΩ.Thelogiclevelcompatibleinputprovidesarisingthresholdof2.3Vandafallingthresholdof1.6V.

UnderVoltageLockout(UVLO)

Thebiassuppliesforthehigh-sideandlow-sidedrivershaveUVLOprotection.VDDaswellasVHBtoVHSdifferentialvoltagesaremonitored.TheVDDUVLOdisablesbothdriverswhenVDDisbelowthespecifiedthreshold.TherisingVDDthresholdis7.0Vwith0.5-Vhysteresis.TheVHBUVLOdisablesonlythehigh-sidedriverwhentheVHBtoVHSdifferentialvoltageisbelowthespecifiedthreshold.TheVHBUVLOrisingthresholdis6.7Vwith1.1-Vhysteresis.

LevelShift

Thelevelshiftcircuitistheinterfacefromthehigh-sideinputtothehigh-sidedriverstagewhichisreferencedtotheswitchnode(HS).ThelevelshiftallowscontroloftheHOoutputreferencedtotheHSpinandprovidesexcellentdelaymatchingwiththelow-sidedriver.

BootDiode

Thebootdiodenecessarytogeneratethehigh-sidebiasisincludedintheUCC27210/11familyofdrivers.ThediodeanodeisconnectedtoVDDandcathodeconnectedtoVHB.WiththeVHBcapacitorconnectedtoHBandtheHSpins,theVHBcapacitorchargeisrefreshedeveryswitchingcyclewhenHStransitionstoground.Thebootdiodeprovidesfastrecoverytimes,lowdioderesistance,andvoltageratingmargintoallowforefficientandreliableoperation.

OutputStages

TheoutputstagesaretheinterfacetothepowerMOSFETsinthepowertrain.Highslewrate,lowresistanceandhighpeakcurrentcapabilityofbothoutputdriversallowforefficientswitchingofthepowerMOSFETs.Thelow-sideoutputstageisreferencedfromVDDtoVSSandthehighsideisreferencedfromVHBtoVHS.

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LayoutRecommendations

Toimprovetheswitchingcharacteristicsandefficiencyofadesign,thefollowinglayoutrulesshouldbefollowed.•LocatethedriverascloseaspossibletotheMOSFETs.

•LocatetheVDD-VSSandVHB-VHS(bootstrap)capacitorsascloseaspossibletothedevice(seeexamplelayoutbelow).

•PaycloseattentiontotheGNDtrace.UsethethermalpadoftheDDAandDRMpackageasGNDbyconnectingittotheVSSpin(GND).TheGNDtracefromthedrivergoesdirectlytothesourceoftheMOSFETbutshouldnotbeinthehighcurrentpathoftheMOSFET(S)drainorsourcecurrent.•UsesimilarrulesfortheHSnodeasforGNDforthehigh-sidedriver.

•ForsystemsusingmultipleUCC27210andUCC27211deviceswerecommendthatdedicateddecouplingcapacitorsbelocatedatVDD-VSSforeachdevice.

•CareshouldbetakentoavoidVDDtracesbeingclosetoLO,HS,andHOsignals.

•UsewidetracesforLOandHOcloselyfollowingtheassociatedGNDorHStraces.60to100-milswidthispreferablewherepossible.

•UseasleasttwoormoreviasifthedriveroutputsorSWnodeneedstoberoutedfromonelayertoanother.ForGNDthenumberofviasneedstobeaconsiderationofthethermalpadrequirementsaswellasparasiticinductance.

•AvoidLIandHI(driverinput)goingclosetotheHSnodeoranyotherhighdV/dTtracesthatcaninducesignificantnoiseintotherelativelyhighimpedanceleads.KeepinmindthatapoorlayoutcancauseasignificantdropinefficiencyorsystemmalfunctionversusagoodPCBlayoutandcanevenleadtodecreasedreliabilityofthewholesystem.

ExampleComponentPlacementFigure21.UCC27210/11ComponentPlacementAdditionalReferences

Thesereferencesandlinkstoadditionalinformationmaybefoundatwww.ti.com

•AdditionallayoutguidelinesforPCBlandpatternsmaybefoundin,QFN/SONPCBAttachment,ApplicationBrief(TexasInstrument'sLiteratureNumberSLUA271)

•Additionalthermalperformanceguidelinesmaybefoundin,PowerPAD™ThermallyEnhancedPackageApplicationReport,ApplicationReport(TexasInstrument'sLiteratureNumberSLMA002A)

•Additionalthermalperformanceguidelinesmaybefoundin,PowerPAD™MadeEasy,ApplicationReport(TexasInstrument'sLiteratureNumberSLMA004)

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SLUSAT7E–NOVEMBER2011–REVISEDAUGUST2013

REVISIONHISTORY

ChangesfromRevisionA(November,2011)toRevisionB•

Page

Changedorderinginformationnotestoreflectcorrectedpartnumber.................................................................................2

Page

ChangesfromRevisionB(February)toRevisionC••••••••••••••

ChangedVDDoperatingcurrentmaxrangeof4.3to4.4inbothplaces..............................................................................5ChangedBootvoltageoperatingcurrentmaxrangefrom4.0to4.2...................................................................................5ChangedHBtoVSSquiescentcurrentmaxrangefrom0.13to1.0.....................................................................................5ChangedHBtoVSSoperatingcurrentmaxrangefrom0.9to1.1........................................................................................5AddedInputUCC27210/11(DDAOnly)values....................................................................................................................5AddedUnder-VoltageLockout(UVLO)DDAonlyvalues,twoplaces.................................................................................5ChangedLOGateDriver'sLow-leveloutputvoltagemaxrangefrom0.15to0.17.............................................................5ChangedLOGateDriver'sVLOHmaxrangefrom0.27to0.29............................................................................................5ChangedHOGATEDriver'sLow-leveloutputvoltagemaxrangefrom0.15to0.17..........................................................5ChangedVLIfallingtoVLOfallingminvaluefrom17to15...................................................................................................6ChangedVHIfallingtoVHOfallingminvaluefrom17to15..................................................................................................6ChangedVLIrisingtoVLOrisingminvaluefrom18to15.....................................................................................................6ChangedVHIrisingtoVHOrisingminvaluefrom18to15....................................................................................................6ChangedFigure17,OutputCurrentvs.OutputVoltage....................................................................................................12

Page

ChangesfromRevisionC(March,2012)toRevisionD•••••

Changedcapacitorrangefrom1.0µFto4.7µF..................................................................................................................9AddedTerminalFunctionsNotetoHIandLIpindescription...............................................................................................9Changedbullet2intheLayoutRecommendations............................................................................................................16AddedNote:Forsystemsusing..........................................................................................................................................16AddedNote:Careshouldbetaken....................................................................................................................................16

Page

ChangesfromRevisionC(November,2012)toRevisionE•••••••••••

ChangedRepetitivepulsedatafrom-18Vto-(24V-VDD)...................................................................................................3AddedadditionaldetailstoNote2........................................................................................................................................3ChangedVoltageonHS,VHS(repetitivepulse<100ns)datafrom-15to-(24V-VDD).......................................................3Deleted2.4-mAoperatingcurrentminrangeinbothplaces................................................................................................5Changedoperatingcurrentmaxrangeextendedto5.2inbothplaces...............................................................................5Deleted1.5minBootvoltageoperatingcurrentrange.........................................................................................................5ChangedBootvoltageoperatingcurrentmaxrangefrom4.2to5.0...................................................................................5ChangedHBtoVSSoperatingcurrentmaxrangefrom1.1to1.2........................................................................................5ChangedLOGateDriver'sLow-leveloutputvoltagemaxrangefrom0.17to0.19.............................................................5ChangedHOGATEDriver'sLow-leveloutputvoltagemaxrangefrom0.17to0.19..........................................................5AddedNote2totheTerminalFunctionsTable....................................................................................................................9

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PACKAGE OPTION ADDENDUM

www.ti.com

26-Aug

PACKAGING INFORMATION

Orderable DeviceUCC27210DUCC27210DDAUCC27210DDARUCC27210DPRRUCC27210DPRTUCC27210DRUCC27210DRMRUCC27210DRMTUCC27211DUCC27211DDAUCC27211DDARUCC27211DPRRUCC27211DPRTUCC27211DRUCC27211DRMRUCC27211DRMT (1)

Status(1)Package TypePackagePinsPackageDrawingQtySOICDDDADDADPRDPRDDRMDRMDDDADDADPRDPRDDRMDRM888101088888810108887575250030002502500300025075752500300025025003000250Eco Plan(2)Lead/Ball FinishCU NIPDAUMSL Peak Temp(3)Op Temp (°C)-40 to 140-40 to 140-40 to 140-40 to 140-40 to 140-40 to 140-40 to 140-40 to 140-40 to 140-40 to 140-40 to 140-40 to 140-40 to 140-40 to 140-40 to 140-40 to 140Device Marking(4/5)SamplesACTIVEGreen (RoHS& no Sb/Br)Level-1-260C-UNLIMLevel-1-260C-UNLIMLevel-1-260C-UNLIMLevel-2-260C-1 YEARLevel-2-260C-1 YEARLevel-1-260C-UNLIMLevel-1-260C-UNLIMLevel-1-260C-UNLIMLevel-1-260C-UNLIMLevel-1-260C-UNLIMLevel-1-260C-UNLIMLevel-2-260C-1 YEARLevel-2-260C-1 YEARLevel-1-260C-UNLIMLevel-1-260C-UNLIMLevel-1-260C-UNLIM272102721027210UCC27210UCC27210272102721027210272112721127211UCC27211UCC27211272112721127211ACTIVESO PowerPADACTIVESO PowerPADACTIVEACTIVEACTIVEACTIVEACTIVEACTIVEWSONWSONSOICVSONVSONSOICGreen (RoHSCU NIPDAUAG& no Sb/Br)Green (RoHSCU NIPDAUAG& no Sb/Br)Green (RoHS& no Sb/Br)Green (RoHS& no Sb/Br)Green (RoHS& no Sb/Br)Green (RoHS& no Sb/Br)Green (RoHS& no Sb/Br)Green (RoHS& no Sb/Br)CU NIPDAUCU NIPDAUCU NIPDAUCU NIPDAUCU NIPDAUCU NIPDAUACTIVESO PowerPADACTIVESO PowerPADACTIVEACTIVEACTIVEACTIVEACTIVEWSONWSONSOICVSONVSONGreen (RoHSCU NIPDAUAG& no Sb/Br)Green (RoHSCU NIPDAUAG& no Sb/Br)Green (RoHS& no Sb/Br)Green (RoHS& no Sb/Br)Green (RoHS& no Sb/Br)Green (RoHS& no Sb/Br)Green (RoHS& no Sb/Br)CU NIPDAUCU NIPDAUCU NIPDAUCU NIPDAUCU NIPDAU The marketing status values are defined as follows:ACTIVE: Product device recommended for new designs.

Addendum-Page 1

PACKAGE OPTION ADDENDUM

www.ti.com

26-Aug-2013

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.PREVIEW: Device has been announced but is not in production. Samples may or may not be available.OBSOLETE: TI has discontinued the production of the device.

(2)

Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availabilityinformation and additional product content details.

TBD: The Pb-Free/Green conversion plan has not been defined.

Pb-Free (RoHS): TI's terms \"Lead-Free\" or \"Pb-Free\" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement thatlead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.

Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used betweenthe die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.

Green (RoHS & no Sb/Br): TI defines \"Green\" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weightin homogeneous material)

(3)

MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(4)

(5)

Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a \"~\" will appear on a device. If a line is indented then it is a continuationof the previous line and the two combined represent the entire Device Marking for that device.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on informationprovided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken andcontinues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 2

PACKAGEMATERIALSINFORMATION

www.ti.com

23-Aug-2013

TAPEANDREELINFORMATION

*Alldimensionsarenominal

Device

PackagePackagePinsTypeDrawingSOPower PADWSONWSONSOICVSONVSONSOPower PADWSONWSONSOICVSONVSON

DDA

8

SPQ

ReelReelA0DiameterWidth(mm)(mm)W1(mm)330.0

12.8

6.4

B0(mm)5.2

K0(mm)2.1

P1(mm)8.0

WPin1(mm)Quadrant12.0

Q1

UCC27210DDAR2500

UCC27210DPRRUCC27210DPRTUCC27210DRUCC27210DRMRUCC27210DRMTUCC27211DDAR

DPRDPRDDRMDRMDDA

10108888

3000250250030002502500

330.0180.0330.0330.0180.0330.0

12.412.412.412.412.412.8

4.254.256.44.254.256.4

4.254.255.24.254.255.2

1.151.152.11.151.152.1

8.08.08.08.08.08.0

12.012.012.012.012.012.0

Q2Q2Q1Q2Q2Q1

UCC27211DPRRUCC27211DPRTUCC27211DRUCC27211DRMRUCC27211DRMT

DPRDPRDDRMDRM

1010888

300025025003000250

330.0180.0330.0330.0180.0

12.412.412.412.412.4

4.254.256.44.254.25

4.254.255.24.254.25

1.151.152.11.151.15

8.08.08.08.08.0

12.012.012.012.012.0

Q2Q2Q1Q2Q2

PackMaterials-Page1

PACKAGEMATERIALSINFORMATION

www.ti.com

23-Aug-2013

*Alldimensionsarenominal

DeviceUCC27210DDARUCC27210DPRRUCC27210DPRTUCC27210DRUCC27210DRMRUCC27210DRMTUCC27211DDARUCC27211DPRRUCC27211DPRTUCC27211DRUCC27211DRMRUCC27211DRMT

PackageTypeSOPowerPAD

WSONWSONSOICVSONVSONSOPowerPAD

WSONWSONSOICVSONVSON

PackageDrawing

DDADPRDPRDDRMDRMDDADPRDPRDDRMDRM

Pins8101088881010888

SPQ25003000250250030002502500300025025003000250

Length(mm)

366.0367.0210.0367.0367.0210.0366.0367.0210.0367.0367.0210.0

Width(mm)364.0367.0185.0367.0367.0185.0364.0367.0185.0367.0367.0185.0

Height(mm)

50.035.035.035.035.035.050.035.035.035.035.035.0

PackMaterials-Page2

IMPORTANTNOTICE

TexasInstrumentsIncorporatedanditssubsidiaries(TI)reservetherighttomakecorrections,enhancements,improvementsandotherchangestoitssemiconductorproductsandservicesperJESD46,latestissue,andtodiscontinueanyproductorserviceperJESD48,latestissue.Buyersshouldobtainthelatestrelevantinformationbeforeplacingordersandshouldverifythatsuchinformationiscurrentandcomplete.Allsemiconductorproducts(alsoreferredtohereinas“components”)aresoldsubjecttoTI’stermsandconditionsofsalesuppliedatthetimeoforderacknowledgment.

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TIdoesnotwarrantorrepresentthatanylicense,eitherexpressorimplied,isgrantedunderanypatentright,copyright,maskworkright,orotherintellectualpropertyrightrelatingtoanycombination,machine,orprocessinwhichTIcomponentsorservicesareused.InformationpublishedbyTIregardingthird-partyproductsorservicesdoesnotconstitutealicensetousesuchproductsorservicesorawarrantyorendorsementthereof.Useofsuchinformationmayrequirealicensefromathirdpartyunderthepatentsorotherintellectualpropertyofthethirdparty,oralicensefromTIunderthepatentsorotherintellectualpropertyofTI.

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Buyeracknowledgesandagreesthatitissolelyresponsibleforcompliancewithalllegal,regulatoryandsafety-relatedrequirements

concerningitsproducts,andanyuseofTIcomponentsinitsapplications,notwithstandinganyapplications-relatedinformationorsupportthatmaybeprovidedbyTI.Buyerrepresentsandagreesthatithasallthenecessaryexpertisetocreateandimplementsafeguardswhichanticipatedangerousconsequencesoffailures,monitorfailuresandtheirconsequences,lessenthelikelihoodoffailuresthatmightcauseharmandtakeappropriateremedialactions.BuyerwillfullyindemnifyTIanditsrepresentativesagainstanydamagesarisingoutoftheuseofanyTIcomponentsinsafety-criticalapplications.

Insomecases,TIcomponentsmaybepromotedspecificallytofacilitatesafety-relatedapplications.Withsuchcomponents,TI’sgoalistohelpenablecustomerstodesignandcreatetheirownend-productsolutionsthatmeetapplicablefunctionalsafetystandardsandrequirements.Nonetheless,suchcomponentsaresubjecttotheseterms.

NoTIcomponentsareauthorizedforuseinFDAClassIII(orsimilarlife-criticalmedicalequipment)unlessauthorizedofficersofthepartieshaveexecutedaspecialagreementspecificallygoverningsuchuse.

OnlythoseTIcomponentswhichTIhasspecificallydesignatedasmilitarygradeor“enhancedplastic”aredesignedandintendedforuseinmilitary/aerospaceapplicationsorenvironments.BuyeracknowledgesandagreesthatanymilitaryoraerospaceuseofTIcomponentswhichhavenotbeensodesignatedissolelyattheBuyer'srisk,andthatBuyerissolelyresponsibleforcompliancewithalllegalandregulatoryrequirementsinconnectionwithsuchuse.

TIhasspecificallydesignatedcertaincomponentsasmeetingISO/TS16949requirements,mainlyforautomotiveuse.Inanycaseofuseofnon-designatedproducts,TIwillnotberesponsibleforanyfailuretomeetISO/TS16949.ProductsAudioAmplifiersDataConvertersDLP®ProductsDSP

ClocksandTimersInterfaceLogicPowerMgmtMicrocontrollersRFID

OMAPApplicationsProcessorsWirelessConnectivity

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