Method for forming isolation layer of semiconducto

专利名称：Method for forming isolation layer of

semiconductor device

发明人：Su Ho Kim,Yun Hyuck Ji申请号：US108480申请日：20040712公开号：US07067390B2公开日：20060627

专利附图：

摘要：Disclosed is a method for forming an isolation layer of a semiconductor device.The method includes the steps of providing a semiconductor substrate having a

predetermined isolation region, sequentially forming a pad oxide layer and a pad nitridelayer exposing the predetermined isolation region on the semiconductor substrate,forming a trench through etching the semiconductor substrate by a predeterminedthickness using the pad nitride layer as a mask, forming a wall oxide layer at a side wall ofthe trench, sequentially forming a nitride layer and an oxide layer on a trench structureincluding the wall oxide layer, forming an AlOlayer on an entire surface of a resultant

structure, planarizing the AlO layer through polishing the AlO layer, and forming theisolation layer by removing the pad nitride layer.

申请人：Su Ho Kim,Yun Hyuck Ji

地址：Kyoungki-do KR,Kyoungki-do KR

国籍：KR,KR

代理机构：Ladas & Parry LLP

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