TRANSPARENT ELECTRICALLY CONDUCTIVE FILM AND PROCE

专利名称：TRANSPARENT ELECTRICALLY CONDUCTIVE

FILM AND PROCESS FOR PRODUCTIONTHEREOF, MEMBER FOR ELECTRONICDEVICE, AND ELECTRONIC DEVICE

发明人：Koichi Nagamoto,Takeshi Kondo,Satoshi

Naganawa

申请号：US13879286申请日：20111013

公开号：US20130230731A1公开日：20130905

专利附图：

摘要：The present invention provides: a transparent conductive film comprising a baselayer, a gas barrier layer, and a transparent conductive layer, the gas barrier layer beingformed of a material that includes silicon atoms, oxygen atoms, and carbon atoms, asilicon atom content rate, an oxygen atom content rate, and a carbon atom content ratein a surface layer part of the gas barrier layer determined by XPS elemental analysisbeing 18.0 to 28.0%, 48.0 to 66.0%, and 10.0 to 28.0%, respectively, based on a totalcontent rate (=100 atom %) of silicon atoms, oxygen atoms, and carbon atoms, and thetransparent conductive film having a water vapor transmission rate at a temperature of40° C. and a relative humidity of 90% of 6.0 g/m/day or less, and a visible light

transmittance at a wavelength of 550 nm of 90% or more; and others. According to thepresent invention, it becomes possible to provide a transparent conductive film thatexhibits an excellent gas barrier capability and excellent transparency, and has low sheetresistance (i.e., exhibits excellent conductivity) even under a high-temperature/high-humidity environment, and others.

申请人：Koichi Nagamoto,Takeshi Kondo,Satoshi Naganawa

地址：Itabashi-ku JP,Itabashi-ku JP,Itabashi-ku JP

国籍：JP,JP,JP

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