Method for manufacturing accurate structures with

专利名称：Method for manufacturing accurate

structures with a high aspect ratio andparticularly for manufacturing X-rayabsorber masks

发明人：Brigitte Schneider-Gmelch,Joseph Mathuni申请号：US06/618416申请日：19840607公开号：US04587184A公开日：19860506

摘要：A method for manufacturing structures having dimensions in a range of 1&mgr;m and below in a layer of material by applying an auxiliary layer consisting of metalor metal oxide on the layer to be structured and utilizing a lacquer mask to structure theauxiliary layer to form a mass therein for the etching of the layer to be structured,characterized by passivating the auxiliary layer by applying a protective layer to preventoxidizing of the auxiliary layer until a desired time. The protective layer can be gold orplatinum and the auxiliary layer can be selected from a group consisting of titanium,hafnium, zirconium, vanadium, chromium, manganese, aluminum, niobium and tantalum.The method is particularly useful to manufacuture absorber structures of X-ray masksthat are used in microelectronics.

申请人：SIEMENS AKTIENGESELLSCHAFT

代理机构：Hill, Van Santen, Steadman & Simpson

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