BU2720AX资料

Philips Semiconductors

Product specification

Silicon Diffused Power TransistorBU2720AX

GENERAL DESCRIPTION

High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontaldeflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.

QUICK REFERENCE DATA

SYMBOLVCESMVCEOICICMPtotVCEsatICsatts

PARAMETER

Collector-emitter voltage peak valueCollector-emitter voltage (open base)Collector current (DC)

Collector current peak valueTotal power dissipation

Collector-emitter saturation voltageCollector saturation currentStorage time

CONDITIONSVBE = 0 V

TYP.------5.57.4

MAX.170082510251.0-8.5

UNITVVAAWVAµs

Ths ≤ 25 ˚C

IC = 5.5 A; IB = 1.38 Af = 16 kHz

ICsat = 5.5 A; f = 16 kHz

PINNING - SOT399

PIN123basecollectoremitterDESCRIPTIONPIN CONFIGURATION

caseSYMBOL

cb123caseisolatedeLIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)SYMBOLVCESMVCEOICICMIBIBM-IB(AV)-IBMPtotTstgTj

PARAMETER

Collector-emitter voltage peak valueCollector-emitter voltage (open base)Collector current (DC)

Collector current peak valueBase current (DC)

Base current peak valueReverse base current

Reverse base current peak value 1Total power dissipationStorage temperatureJunction temperature

CONDITIONSVBE = 0 V

MIN.----------65-MAX.1700825102510141505150150

UNITVVAAAAmAAW˚C˚C

average over any 20 ms periodThs ≤ 25 ˚C

ESD LIMITING VALUES

SYMBOLVC

PARAMETER

CONDITIONS

MIN.-MAX.10

UNITkV

Electrostatic discharge capacitor voltageHuman body model (250 pF,

1.5 kΩ)

1 Turn-off current.

September 19971Rev 1.200

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Philips Semiconductors

Product specification

Silicon Diffused Power TransistorBU2720AX

THERMAL RESISTANCES

SYMBOLRth j-hsRth j-hsRth j-a

PARAMETERJunction to heatsinkJunction to heatsinkJunction to ambient

CONDITIONS

without heatsink compoundwith heatsink compoundin free air

TYP.--35

MAX.3.72.8-UNITK/WK/WK/W

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specifiedSYMBOLVisolCisol

PARAMETER

Repetitive peak voltage from allthree terminals to externalheatsink

CONDITIONS

R.H. ≤ 65 % ; clean and dustfree

MIN.--22TYP.

MAX.2500-UNITVpF

Capacitance from T2 to externalf = 1 MHzheatsink

STATIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specifiedSYMBOLICESICESIEBOBVEBOVCEOsustVCEsatVBEsathFEhFE

PARAMETER

Collector cut-off current 2

Emitter cut-off current

Emitter-base breakdown voltageCollector-emitter sustaining voltageCollector-emitter saturation voltageBase-emitter saturation voltageDC current gain

CONDITIONS

VBE = 0 V; VCE = VCESMmaxVBE = 0 V; VCE = VCESMmax;Tj = 125 ˚C

VEB = 7.5 V; IC = 0 AIB = 1 mA

IB = 0 A; IC = 100 mA;L = 25 mH

IC = 5.5 A; IB = 1.38 AIC = 5.5 A; IB = 1.38 AIC = 100 mA; VCE = 5 VIC = 5.5 A; VCE = 1 V

MIN.---7.5825---4

TYP.---13.5900--225.5

MAX.1.02.01.0--1.01.0-7.5

UNITmAmAmAVVVV

DYNAMIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specifiedSYMBOL

PARAMETER

Switching times (16 kHz linedeflection circuit)

CONDITIONS

ICsat = 5.5 A; LC = 750 µH;Cfb = 15.5 nF; VCC = 125 V;

IB(end) = 1.2 A; LB = 6 µH; -VBB = 4 V;-IBM = ICM/2;

7.40.7

8.50.9

µsµs

TYP.

MAX.

UNIT

tstf

Turn-off storage timeTurn-off fall time

2 Measured with half sine-wave voltage (curve tracer).

September 19972Rev 1.200

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Philips Semiconductors

Product specification

Silicon Diffused Power TransistorBU2720AX

ICsat+ 50v100-200RIC90 %HorizontalOscilloscopeIBtsIBend10 %tftVertical100R30-60 Hz6V1Rt- IBMFig.1. Test circuit for VCEOsust.Fig.4. Switching times definitions.IC / mA+ 150 v nominal adjust for ICsat250200Lc100IBendLBT.U.T.Cfb0VCE / VminVCEOsust-VBBFig.2. Oscilloscope display for VCEOsust.Fig.5. Switching times test circuit.TRANSISTORICDIODEICsat100hFEVCE = 5 VBU2720/22AFThs = 25 CThs = 85 CtIBIBendt20us26usus10VCEt10.010.1110100IC / AFig.3. Switching times waveforms.Fig.6. DC current gain. hFE = f (IC)Parameter Ths(Low and high gain)September 19973Rev 1.200

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Philips Semiconductors

Product specification

Silicon Diffused Power TransistorBU2720AX

100hFEVCE = 1 VBU2720/22AFThs = 25 CThs = 85 C10PTOT / WIC = 4.5 Af = 16 kHzTj = 85 CBU2720AF1010.010.1110IC / A100100.51.01.5IB / A2.0Fig.7. DC current gain. hFE = f (IC)Parameter Ths(Low and high gain)Fig.10. Limit Ptot; Tj = 85˚CPtot = f (IB(end)); IC = 4.5 A; f = 16 kHz10VCEsat / VTj = 85 CTj = 25 CBU2720AFPTOT / W10IC = 5.5 Af = 16 kHzTj = 85 CBU2720AF1IC/IB = 80.1IC/IB = 40.010.1110IC / A10010.511.52IB / A2.5Fig.8. Typical collector-emitter saturation voltage.VCEsat = f (IC); parameter IC/IBFig.11. Limit Ptot; Tj = 85˚CPtot = f (IB(end)); IC = 5.5 A; f = 16 kHz1VBEsat / VTj = 85 CTj = 25 CBU2720AF12IC = 5.5 Ats/tf / usBU2720AF1080.90.84.5 AIC = 5.5 AIC = 4.5 A0.720.600.511.5IB / A200.511.52IB / A2.5Fig.9. Typical base-emitter saturation voltage.VBEsat = f (IB); parameter ICSeptember 1997

4

Fig.12. Limit storage and fall time.ts = f (IB); tf = f (IB); Parameter IC; Tj = 85˚C; f = 16 kHzRev 1.200

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Philips Semiconductors

Product specification

Silicon Diffused Power TransistorBU2720AX

120 110 100 90 80 70 60 50 40 30 20 10 0 PD%Normalised Power Deratingwith heatsink compoundVCCLCIBendVCLLBT.U.T.CFB-VBB020406080Ths / C100120140Fig.13. Normalised power dissipation.PD% = 100⋅PD/PD 25˚C = f (Ths)Fig.15. Test Circuit RBSOA. VCC = 150 V;-VBB = 1 - 4 V;LC = 1 mH; VCL = 1500 V; LB = 1 - 3 µH;CFB = 1 - 4 nF; IB(end) = 0.8 - 4 AIC / A26242220181614121082010010 Zth / (K/W)BU2720AF/DF1 0.50.20.10.050.02Area wherefails occur0.1 0.01 D = 00.001 1E-06PDtpD = tpTtT1E-041E-02t / s1E+00VCE / V10001700Fig.14. Transient thermal impedance.Zth j-hs = f(t); parameter D = tp/TFig.16. Reverse bias safe operating area. Tj ≤ TjmaxSeptember 19975Rev 1.200

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Philips Semiconductors

Product specification

Silicon Diffused Power TransistorBU2720AX

MECHANICAL DATA

Dimensions in mmNet Mass: 5.88 g16.0 max0.74.510.027max22.5max25.125.73.35.8 max3.0255.12.2 max18.1min4.51.10.4 M25.455.453.3 0.95 maxFig.17. SOT399; The seating plane is electrically isolated from all terminals.Notes

1. Refer to mounting instructions for F-pack envelopes.2. Epoxy meets UL94 V0 at 1/8\".

September 19976Rev 1.200

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Philips Semiconductors

Product specification

Silicon Diffused Power TransistorBU2720AX

DEFINITIONS

Data sheet statusObjective specificationProduct specificationLimiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above oneor more of the limiting values may cause permanent damage to the device. These are stress ratings only andoperation of the device at these or at any other conditions above those given in the Characteristics sections ofthis specification is not implied. Exposure to limiting values for extended periods may affect device reliability.Application information

Where application information is given, it is advisory and does not form part of the specification.© Philips Electronics N.V. 1997

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of thecopyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to beaccurate and reliable and may be changed without notice. No liability will be accepted by the publisher for anyconsequence of its use. Publication thereof does not convey nor imply any license under patent or otherindustrial or intellectual property rights.

This data sheet contains target or goal specifications for product development.This data sheet contains final product specifications.

Preliminary specificationThis data sheet contains preliminary data; supplementary data may be published later.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of theseproducts can be reasonably expected to result in personal injury. Philips customers using or selling these productsfor use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resultingfrom such improper use or sale.

September 19977Rev 1.200