专利名称：Method for manufacturing semiconductor
integrated circuit device
发明人：Tatsuya Hinoue,Fumitoshi Ito,Shiro
Kamohara
申请号：US10355302申请日：20030131公开号：US07067889B2公开日：20060627
专利附图：
摘要：A two-type gate process is suitable for forming a gate insulation film partiallyformed of a high dielectric film, for example, a titanium oxide film (gate insulation film of
the internal circuit) having a relative dielectric constant larger than that of silicon nitrideon a substrate, and a silicon nitride film is deposited on the titanium oxide film. The siliconnitride film will prevent oxidation of the titanium oxide film when the surface of thesubstrate is subjected to thermal oxidation in the next process step. Next, the siliconnitride film and the titanium oxide film on the I/O circuit region are removed, while thesilicon nitride film and the titanium oxide film on the internal circuit region remain, andthe substrate is subjected to thermal oxidation to form a silicon oxide film as a gateinsulation film on the surface of the I/O circuit region.
申请人：Tatsuya Hinoue,Fumitoshi Ito,Shiro Kamohara
地址：Odawara JP,Hamura JP,Hachioji JP
国籍：JP,JP,JP
代理机构：Antonelli, Terry, Stout and Kraus, LLP.
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