Semiconductor memory device capable of performing

专利名称：Semiconductor memory device capable of

performing refresh operation without autorefresh command

发明人：Hyun-Sung Shin,Seung-Man Shin,In-Su Choi申请号：US13970738申请日：20130820公开号：US076615B2公开日：20150310

专利附图：

摘要：A semiconductor memory device includes an internal address generating circuit;an internal command generating circuit; and a memory cell array including one or more

memory bank groups. The semiconductor memory device is configured such that when aread command or a write command is input, if a first portion of a plurality of memorybanks of a first memory bank group from among one or more memory bank groups ofthe memory cell array performs a read operation or a write operation, a second portionof the plurality of memory banks of the first memory bank group performs a refreshoperation.

申请人：Samsung Electronics Co., Ltd.

地址：Suwon-si, Gyeonggi-Do KR

国籍：KR

代理机构：Harness, Dickey & Pierce, P.L.C.

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