Magnetoresistive materials

专利名称：Magnetoresistive materials发明人：Satomi, Mitsuo,Sakakima, Hiroshi申请号：EP92103874.1申请日：19920306公开号：EP0503499B2公开日：19991013

摘要：A magnetoresistive material comprising a first magnetic thin-film layer mainlycomposed of Co with a thickness of 10 to 100Å, and a second magnetic thin-film layermainly composed of NiFeCo with a thickness of 10 to 100Å, both of which layers arealternately laminated through a non-magnetic metallic thin-film layer sandwichedtherebetween, mainly composed of Cu with a thickness of 10 to 35Å, wherein X, Y and Zare 0.6 ≦ X ≦ 0.9, 0 ≦ Y ≦ 0.3, and 0.01 ≦ Z ≦ 0.3, respectively, and a second magnetic thin-film layer mainly composed of 50 atomic% or more of Ni, with a thickness of 10 to 100Å,both of which layers are alternately laminated through a non-magnetic metallic thin-filmlayer sandwiched therebetween mainly composed of Cu with a thickness of 10 to 35Å, andnon-magnetic metallic thin-film layers mainly composed of Cu with a thickness of 10 to25Å, both of the two kinds of layers being laminated, and non-magnetic metallic thin-filmlayers mainly composed of Ni-Co containing 50 atomic% or more of Ni with a thickness of10 to 100Å, and non-magnetic metallic thin-film layers mainly composed of Cu having athickness of 10 to 25Å, both of the two kinds of layers being laminated.

申请人：MATSUSHITA ELECTRIC IND CO LTD

地址：JP

国籍：JP

代理机构：Patentanwälte Leinweber & Zimmermann

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