Laser annealing method and manufacturing method of

专利名称：Laser annealing method and manufacturing

method of a semiconductor device

发明人：Shunpei Yamazaki,Hisashi Ohtani,Koichiro

Tanaka,Kenji Kasahara,Ritsuko Kawasaki

申请号：US11707094申请日：20070216公开号：US07473622B2公开日：20090106

专利附图：

摘要：To provide a laser apparatus and a laser annealing method with which acrystalline semiconductor film with a larger crystal grain size is obtained and which are

low in their running cost. A solid state laser easy to maintenance and high in durability isused as a laser, and laser light emitted therefrom is linearized to increase the throughputand to reduce the production cost as a whole. Further, both the front side and the backside of an amorphous semiconductor film is irradiated with such laser light to obtain thecrystalline semiconductor film with a larger crystal grain size.

申请人：Shunpei Yamazaki,Hisashi Ohtani,Koichiro Tanaka,Kenji Kasahara,RitsukoKawasaki

地址：Setagaya JP,Atsugi JP,Atsugi JP,Atsugi JP,Atsugi JP

国籍：JP,JP,JP,JP,JP

代理机构：Robinson Intellectual Property Law Office, P.C.

代理人：Eric J. Robinson

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