Method of fabricating an electronic device

专利名称：Method of fabricating an electronic device发明人：Frank A. Baiocchi,James Thomas Cargo,John

Michael DeLucca,Edward B. Harris

申请号：US12220169申请日：20080722

公开号：US20090029490A1公开日：20090129

专利附图：

摘要：It has been found that for silicon integrated circuits having capacitor structuresor other p-n junctions structure at a technology node of 32 nm or smaller, photovoltaicinduced corrosion of copper in the metallization stack is a significant issue. Thus

processing conditions or device configurations are employed that preclude suchcorrosion. In one embodiment photovoltaic induced corrosion is monitored to preventcompletion of devices with corrosion defects.

申请人：Frank A. Baiocchi,James Thomas Cargo,John Michael DeLucca,Edward B. Harris

地址：Allentown PA US,Bethlehem PA US,Wayne PA US,Fogelsville PA US

国籍：US,US,US,US

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