Method for resin encapsulation of a semiconductor

专利名称：Method for resin encapsulation of a

semiconductor device and a resincomposition therefor

发明人：Kunio Itoh,Kiyoshi Yokokawa,Tetuo

Yoshida,Kazuo Koya

申请号：US06/459220申请日：19830119公开号：US047724A公开日：19880920

摘要：While high-performance semiconductor devices encapsulated with a resincomposition are subject to the problem of wrong operation due to the alpha-particlesemitted from the trace amounts of radioactive impurities, e.g. uranium and thorium,contained in the silica filler incorporated in the resin composition, a means for solving thisproblem is provided by use of a silicon dioxide powder obtained by the pyrolysis of avolatilizable silicon compound free from radioactive impurities in an oxidizing conditionand having an average particle diameter in the range from 0.5 to 100 &mgr;m in place ofthe conventional silica fillers.

申请人：SHIN-ETSU CHEMICAL CO., LTD.

代理人：Jules E. Goldberg

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