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Data writing and reading method for memory device

来源:筏尚旅游网
专利内容由知识产权出版社提供

专利名称:Data writing and reading method for

memory device employing magnetic domainwall movement

发明人:Chee-kheng Lim,Eun-sik Kim申请号:US11750376申请日:20070518公开号:US07751224B2公开日:20100706

专利附图:

摘要:A method of data recording and reading for a memory device employingmagnetic domain wall movement. The memory device includes a writing track, an

interconnecting layer formed on the writing track, and a recording track formed on theinterconnecting layer.

申请人:Chee-kheng Lim,Eun-sik Kim

地址:Yongin-si KR,Yongin-si KR

国籍:KR,KR

代理机构:Harness, Dickey & Pierce, P.L.C.

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