专利名称：Memory Arrays
发明人：Zailong Bian,Janos Fucsko申请号：US14480454申请日：20140908
公开号：US20140374833A1公开日：20141225
专利附图：
摘要：The invention includes semiconductor constructions having trenched isolationregions. The trenches of the trenched isolation regions can include narrow bottomportions and upper wide portions over the bottom portions. Electrically insulativematerial can fill the upper wide portions while leaving voids within the narrow bottom
portions. The trenched isolation regions can be incorporated into a memory array, and/orcan be incorporated into an electronic system. The invention also includes methods offorming semiconductor constructions.
申请人：Micron Technology, Inc.
地址：Boise ID US
国籍：US
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