HFA15TB60S
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 15 A
FEATURES
•Ultrafast recoveryUU
•••••
Ultrasoft recoveryVery low IRRMVery low Qrr
Specified at operating conditions
Designed and qualified for industrial level
Basecathode2BENEFITS
•••••
Reduced RFI and EMI
Reduced power loss in diode and switching transistorHigher frequency operationReduced snubbingReduced parts count
N/C13AnodeD2PAKDESCRIPTION
HFA15TB60S is a state of the art ultrafast recovery diode.Employing the latest in epitaxial construction and advancedprocessing techniques it features a superb combination ofcharacteristics which result in performance which isunsurpassed by any rectifier previously available. With basicratings of 600 V and 15 A continuous current, theHFA15TB60S is especially well suited for use as thecompanion diode for IGBTs and MOSFETs. In addition toultrafast recovery time, the HEXFRED® product line featuresextremely low values of peak recovery current (IRRM) anddoes not exhibit any tendency to “snap-off” during the tbportion of recovery. The HEXFRED features combine to offerdesigners a rectifier with lower noise and significantly lowerswitching losses in both the diode and the switchingtransistor. These HEXFRED advantages can help tosignificantly reduce snubbing, component count andheatsink sizes. The HEXFRED HFA15TB60S is ideallysuited for applications in power supplies and powerconversion systems (such as inverters), motor drives, andmany other similar applications where high speed, highefficiency is needed.
PRODUCT SUMMARY
VR
VF at 15 A at 25 °C
IF(AV)trr (typical)TJ (maximum)
QrrdI(rec)M/dt
600 V1.7 V15 A23 ns150 °C84 nC188 A/µs
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOLCathode to anode voltage
Maximum continuous forward currentSingle pulse forward currentMaximum repetitive forward currentMaximum power dissipation
Operating junction and storage temperature range
VRIFIFSMIFRMPDTJ, TStg
TC = 25 °CTC = 100 °CTC = 100 °C
TEST CONDITIONSVALES
60015150607429- 55 to + 150
W°CANITSV
Document Number: 93064
Revision: 22-Oct-08
For technical questions, contact: diodes-tech@vishay.comwww.vishay.com
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HFA15TB60S
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 15 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOLCathode to anodebreakdown voltageMaximum forward voltage
VBR
IR = 100 µAIF = 15 A
VFM
IF = 30 A
IF = 15 A, TJ = 125 °C
Maximum reverse leakage currentJunction capacitanceSeries inductance
IRMCTLS
VR = VR rated
TJ = 125 °C, VR = 0.8 x VR ratedVR = 200 V
See fig. 2See fig. 3See fig. 1
TEST CONDITIONS MIN. TYP. MAX. NITS
600--------1.31.51.0400258.0
-1.72.010100050-V
1.21.6UµApFnH
Measured lead to lead 5 mm from package body
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOLReverse recovery time
See fig. 5
Peak recovery currentSee fig. 6
Reverse recovery chargeSee fig. 7
Peak rate of fall of recoverycurrent during tbSee fig. 8
trrtrr1trr2IRRM1IRRM2Qrr1Qrr2dI(rec)M/dt1dI(rec)M/dt2
TJ = 25 °CTJ = 125 °CTJ = 25 °CTJ = 125 °CTJ = 25 °CTJ = 125 °CTJ = 25 °CTJ = 125 °C
IF = 15 A
dIF/dt = 200 A/µsVR = 200 V
TEST CONDITIONS MIN. TYP. MAX. NITS
IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V
---------23U-501054.56.584241188
601206.010180600-A/µs
160-UAnCns
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOLLead temperatureThermal resistance,
junction to caseThermal resistance,junction to ambientWeightMarking device
Case style D2PAK
Tlead
TEST CONDITIONS
0.063\" from case (1.6 mm) for 10 s
MIN. TYP. MAX. NITS--------2.00.07
3001.7
K/W
socket mountRthJA Typical 80--goz.°C
RthJC HFA15TB60S
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For technical questions, contact: diodes-tech@vishay.comDocument Number: 93064
Revision: 22-Oct-08
元器件交易网www.cecb2b.com
HFA15TB60S
HEXFRED®Vishay High Power Products
Ultrafast Soft Recovery Diode, 15 A
IF - Instantaneous Forward Current (A)10010 000IR - Reverse Current (µA)10001001010.10.01TJ = 150 °CTJ = 125 °C10TJ = 150 °CTJ = 125 °CTJ = 25 °CTJ = 25 °C11.01.21.41.61.82.02.22.40100200300400500600VFM - Forward Voltage Drop (V)Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
VR - Reverse Voltage (V)Fig. 2 - Typical Reverse Current vs. Reverse Voltage
100CT - Junction Capacitance (pF)TJ = 25 °C10101001000VR - Reverse Voltage (V)Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10ZthJC - Thermal Response 1PDMt1t20.1Single pulse(thermal response)0.010.000010.00010.001D = 0.50D = 0.20D = 0.10D = 0.05D = 0.02D = 0.010.01Notes:1. Duty factor D = t1/t22. Peak TJ = PDM x ZthJC + TC0.1 1t1 - Rectangular Pulse Duration (s)Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Document Number: 93064Revision: 22-Oct-08
For technical questions, contact: diodes-tech@vishay.comwww.vishay.com
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HFA15TB60S
Vishay High Power Products
100IF = 30 AIF = 15 AIF = 5 A
HEXFRED®
Ultrafast Soft Recovery Diode, 15 A
800700600VR = 200 VTJ = 125 °CTJ = 25 °C80trr (ns)60Qrr (nC)50040030020040IF = 30 AIF = 15 AIF = 5 A20VR = 200 VTJ = 125 °CTJ = 25 °C1000100010010000100dIF/dt (A/µs)Fig. 5 - Typical Reverse Recovery Time vs. dIF/dtdIF/dt (A/µs)Fig. 7 - Typical Stored Charge vs. dIF/dt
25VR = 200 VTJ = 125 °CTJ = 25 °C10 000IF = 30 AIF = 15 AIF = 5 A201510IF = 30 AIF = 15 AIF = 5 AdI(rec)M/dt (A/µs)Irr (A)1000501001000100100VR = 200 VTJ = 125 °CTJ = 25 °C1000dIF/dt (A/µs)Fig. 6 - Typical Recovery Current vs. dIF/dtdIF/dt (A/µs)Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt
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For technical questions, contact: diodes-tech@vishay.comDocument Number: 93064
Revision: 22-Oct-08
元器件交易网www.cecb2b.com
HFA15TB60S
HEXFRED®Vishay High Power Products
Ultrafast Soft Recovery Diode, 15 A
VR = 200 V0.01 ΩL = 70 µHD.U.T.dIF/dtadjustDGIRFP250SFig. 9 - Reverse Recovery Parameter Test Circuit
(3)IF0trrtatbQrr(2)(4)IRRM0.5 IRRMdI(rec)M/dt(5)0.75 IRRM(1)dIF/dt(1) dIF/dt - rate of change of current through zero crossing(2) IRRM - peak reverse recovery current(3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr =trr x IRRM 2(5) dI(rec)M/dt - peak rate of change of current during tb portion of trrFig. 10 - Reverse Recovery Waveform and Definitions
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking informationPackaging informationSPICE model
http://www.vishay.com/doc?95046http://www.vishay.com/doc?95054http://www.vishay.com/doc?95032http://www.vishay.com/doc?95357
Document Number: 93064Revision: 22-Oct-08
For technical questions, contact: diodes-tech@vishay.comwww.vishay.com
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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Vishay disclaims any and all liability arising out of the use or application of any product described herein or of anyinformation provided herein to the maximum extent permitted by law. The product specifications do not expand orotherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressedtherein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by thisdocument or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unlessotherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in suchapplications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resultingfrom such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regardingproducts designed for such applications.
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Document Number: 91000Revision: 18-Jul-08
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