专利名称：Method of forming polycrystalline silicon
lines and vias on a silicon substrate
发明人：Lawrence K. White,Chung P. Wu申请号：US06/238804申请日：19810227公开号：US043199A公开日：19820316
摘要：The method involves the formation of conductive, polycrystalline silicon linesand vias by the conversion of amorphous silicon in contact with the underlying siliconsubstrate through the use of a laser annealing process.
申请人：RCA CORPORATION
代理人：Birgit E. Morris,Donald S. Cohen,Sanford J. Asman
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