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Method of forming polycrystalline silicon lines an

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专利名称:Method of forming polycrystalline silicon

lines and vias on a silicon substrate

发明人:Lawrence K. White,Chung P. Wu申请号:US06/238804申请日:19810227公开号:US043199A公开日:19820316

摘要:The method involves the formation of conductive, polycrystalline silicon linesand vias by the conversion of amorphous silicon in contact with the underlying siliconsubstrate through the use of a laser annealing process.

申请人:RCA CORPORATION

代理人:Birgit E. Morris,Donald S. Cohen,Sanford J. Asman

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