Control method of nonvolatile memory device

专利名称：Control method of nonvolatile memory

device

发明人：Sunil Shim,Jin-Man Han,Sang-Wan Nam,Won-Taeck Jung

申请号：US14546477申请日：20141118公开号：US09147492B2公开日：20150929

专利附图：

摘要：According to example embodiments, a control method of a nonvolatile memorydevice, which includes a plurality of memory blocks on a substrate, each memory block

including a plurality of sub blocks stacked in a direction perpendicular to the substrateand being configured to be erased independently and each sub block including a pluralityof memory cells stacked in the direction perpendicular to the substrate. The controlmethod includes comparing a count value of a first memory block with a reference value,the count value determined according to the number of program, read, or eraseoperations executed at the first memory block after data is programmed in the firstmemory block; and if the count value is greater than or equal to the reference value,performing a reprogram operation in which data programmed in first the memory blockis read and the read data is programmed in a second memory block.

申请人：Sunil Shim,Jin-Man Han,Sang-Wan Nam,Won-Taeck Jung

地址：Seoul KR,Seongnam-si KR,Hwaseong-si KR,Hwaseong-si KR

国籍：KR,KR,KR,KR

代理机构：Harness, Dickey & Pierce, P.L.C.

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