Method for Manufacturing a Transistor Device Compr

专利名称：Method for Manufacturing a Transistor

Device Comprising a Germanium ChannelMaterial on a Silicon Based Substrate, andAssociated Transistor Device

发明人：Jianwu Sun,Roger Loo申请号：US14934111申请日：20151105

公开号：US20160126109A1公开日：20160505

专利附图：

摘要：Method for manufacturing a transistor device comprising a germanium channel

material on a silicon based substrate, the method comprising providing a shallow trenchisolation (STI) substrate comprising a silicon protrusion embedded in STI dielectricstructures, and partially recessing the silicon protrusion in order to provide a trench inbetween adjacent STI structures, and to provide a V-shaped groove at an upper surfaceof the recessed protrusion. The method also includes growing a SiGeSRB layer in thetrenches, and growing a germanium based channel layer on the SiGeSRB layer. In thisexample, the SiGeSRB layer comprises a germanium content x that is within the range of20% to 99%, and the SRB layer has a thickness less than 400 nm. The present disclosurealso relates to an associated transistor device.

申请人：IMEC VZW

地址：Leuven BE

国籍：BE

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