BD241BFP资料

BD241BFPBD242BFP

COMPLEMENTARYSILICONPOWERTRANSISTORS

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SGS-THOMSONPREFERREDSALESTYPESCOMPLEMENTARYPNP-NPNDEVICESFULLYMOLDEDISOLATEDPACKAGE2000VDCISOLATION(U.L.COMPLIANT)

APPLICATIONSsGENERALPURPOSESWITCHINGsGENERALPURPOSEAMPLIFIERS

DESCRIPTION

TheBD241BFPissiliconepitaxial-baseNPNtransistorsmountedinTO-220FPfullymoldedisolatedpackage.

Itisintededforpowerlinearandswitchingapplications.

ThecomplementaryPNPtypesistheBD242BFP.

123

TO-220FP

INTERNALSCHEMATICDIAGRAM

ABSOLUTEMAXIMUMRATINGS

Symbol

Parameter

NPNPNP

VCERVCEOVEBOICICMIBPtotTstgTj

Collector-BaseVoltage(RBE=100Ω)Collector-EmitterVoltage(IB=0)Emitter-BaseVoltage(IC=0)CollectorCurrentCollectorPeakCurrentBaseCurrent

TotalDissipationatTc≤25CStorageTemperature

Max.OperatingJunctionTemperature

o

ValueBD241BFPBD242BFP

9080535124-65to150

150

Unit

VVVAAAW

oo

CC

ForPNPtypesvoltageandcurrentvaluesarenegative.

April19981/4

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BD241BFP/BD242BFP

THERMALDATA

Rthj-case

ThermalResistanceJunction-case

Max

5.3

o

C/W

ELECTRICALCHARACTERISTICS(Tcase=25oCunlessotherwisespecified)

SymbolICEOICESIEBO

Parameter

CollectorCut-offCurrent(IB=0)CollectorCut-offCurrent(VBE=0)EmitterCut-offCurrent(IC=0)

TestConditions

VCE=60VVCE=80VVEB=5VIC=30mA

80Min.

Typ.

Max.0.30.21

UnitmAmAmAV

VCEO(sus)∗Collector-Emitter

SustainingVoltage(IB=0)VCE(sat)∗VBE(ON)∗hFE*

Collector-EmitterSaturationVoltageBase-EmitterVoltageDCCurrentGain

IC=3AIC=3AIC=1AIC=3A

IB=0.6AVCE=4VVCE=4VVCE=4V

2510

1.21.8

VV

∗ Pulsed:Pulseduration=300µs,dutycycle≤2%ForPNPtypesvoltageandcurrentvaluesarenegative.

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BD241BFP/BD242BFP

TO-220FPMECHANICALDATA

DIM.

MIN.

ABDEFF1F2GG1HL2L3L4L6L7Ø

28.69.815.9934.42.52.50.450.751.151.1.952.410

16

30.610.616.49.33.2

1.1260.3850.6260.30.118

mmTYP.

MAX.4.62.72.750.711.71.75.22.710.4

MIN.0.1730.0980.0980.0170.0300.0450.0450.1950.0940.393

0.630

1.2040.4170.50.3660.126

inchTYP.

MAX.0.1810.1060.1080.0270.0390.0670.0670.2040.1060.409

ABL3

L6

L7

F1¯

FDG1EHF2123

L2

L4

G3/4

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BD241BFP/BD242BFP

Informationfurnishedisbelievedtobeaccurateandreliable.However,SGS-THOMSONMicroelectronicsassumesnoresponsabilityfortheconsequencesofuseofsuchinformationnorforanyinfringementofpatentsorotherrightsofthirdpartieswhichmayresultsfromitsuse.NolicenseisgrantedbyimplicationorotherwiseunderanypatentorpatentrightsofSGS-THOMSONMicroelectronics.Specificationsmentionedinthispublicationaresubjecttochangewithoutnotice.Thispublicationsupersedesandreplacesallinformationpreviouslysupplied.

SGS-THOMSONMicroelectronicsproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithoutexpresswrittenapprovalofSGS-THOMSONMicroelectonics.

©1998SGS-THOMSONMicroelectronics-PrintedinItaly-AllRightsReserved

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