PLASMA-ASSISTED CHEMICAL VAPOR DEPOSITION METHOD H

专利名称：PLASMA-ASSISTED CHEMICAL VAPOR

DEPOSITION METHOD HAVING INCREASEDPLASMA DENSITY AND DEVICE FORIMPLEMENTING THE METHOD

发明人：REYNVAAN, Jacob,GRÜNWALD, Johannes申请号：EP13726698.7申请日：20130508公开号：EP2859131B1公开日：20190306

摘要：The present invention relates to a kind of devices, and the technology (8) forcoating substrate is mutually separated according to plasma chemistry poison gas. Thebasic idea of the invention is that the main plasma for increasing ion concentration makesmore ionic adsorptions promote layer growth (12) in substrate (8). According to thepresent invention, ion concentration increases and forms (8) plated film on the surface ofso-called fireball substrate. Term fireball refers to ionization process, and that is lined upelectrode surface (2) as the spontaneous small appearance brightly to shine in plasmatreatment. For this purpose, an electrode (2), which introduces existing backgroundplasma, is connected to positive potential (4).

申请人：Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.

代理机构：advotec.

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