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Boron incorporated diffusion barrier material

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专利内容由知识产权出版社提供

专利名称:Boron incorporated diffusion barrier

material

发明人:Vishnu K. Agarwal,Gurtej S. Sandhu申请号:US10679822申请日:20031006

公开号:US20040082156A1公开日:20040429

专利附图:

摘要:A diffusion barrier layer comprising TiNBis disclosed for protection of gateoxide layers in integrated transistors. The diffusion barrier layer can be fabricated by firstforming a TiN layer and then incorporating boron into the TiN layer. The diffusion barrier

layer can also be fabricated by forming a TiNBlayer using a TDMAT process includingboron. The diffusion barrier layer can also be fabricated by forming a TiNBlayer using aCVD process. The diffusion barrier layer is of particular utility in conjunction with tungstenor tungsten silicide conductive layers formed by CVD.

申请人:AGARWAL VISHNU K.,SANDHU GURTEJ S.

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