专利名称:Boron incorporated diffusion barrier
material
发明人:Vishnu K. Agarwal,Gurtej S. Sandhu申请号:US10679822申请日:20031006
公开号:US20040082156A1公开日:20040429
专利附图:
摘要:A diffusion barrier layer comprising TiNBis disclosed for protection of gateoxide layers in integrated transistors. The diffusion barrier layer can be fabricated by firstforming a TiN layer and then incorporating boron into the TiN layer. The diffusion barrier
layer can also be fabricated by forming a TiNBlayer using a TDMAT process includingboron. The diffusion barrier layer can also be fabricated by forming a TiNBlayer using aCVD process. The diffusion barrier layer is of particular utility in conjunction with tungstenor tungsten silicide conductive layers formed by CVD.
申请人:AGARWAL VISHNU K.,SANDHU GURTEJ S.
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