Boron incorporated diffusion barrier material

专利名称：Boron incorporated diffusion barrier

material

发明人：Vishnu K. Agarwal,Gurtej S. Sandhu申请号：US10679822申请日：20031006

公开号：US20040082156A1公开日：20040429

专利附图：

摘要：A diffusion barrier layer comprising TiNBis disclosed for protection of gateoxide layers in integrated transistors. The diffusion barrier layer can be fabricated by firstforming a TiN layer and then incorporating boron into the TiN layer. The diffusion barrier

layer can also be fabricated by forming a TiNBlayer using a TDMAT process includingboron. The diffusion barrier layer can also be fabricated by forming a TiNBlayer using aCVD process. The diffusion barrier layer is of particular utility in conjunction with tungstenor tungsten silicide conductive layers formed by CVD.

申请人：AGARWAL VISHNU K.,SANDHU GURTEJ S.

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