专利名称：Semiconductor device with a multilayered
contact structure having a boro- phosphatesilicate glass planarizing layer
发明人：Yun-seung Shin,Sung-nam Chang申请号：US08/188113申请日：19940128公开号：US05414302A公开日：19950509
摘要：A high-density semiconductor memory device has a self-aligning contactstructure for electrical connection between lower and upper conductive layers, and aninter-insulating layer with a via for forming the contact structure. The contact structurehas a contact pad including a first conductive layer electrically connected with the lowerconductive layer within the via and formed on a predetermined portion of the inter-insulating layer around the groove, a planarizing material filling up the groove formed onthe first conductive layer, and second conductive layers formed on the planarizingmaterial and exposed first conductive layer.
申请人：SAMSUNG ELECTRONICS CO., LTD.
代理机构：Rothwell, Figg, Ernst & Kurz
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