POWER MOSFET DEVICE WITH A GATE CONDUCTOR SURROUND

专利名称：POWER MOSFET DEVICE WITH A GATE

CONDUCTOR SURROUNDING SOURCE ANDDRAIN PILLARS

发明人：MING TANG,SHIH PING CHIAO申请号：US13740898申请日：20130114

公开号：US20140197475A1公开日：20140717

专利附图：

摘要：A power MOSFET device includes at least one MOSFET unit disposed over asubstrate, wherein the MOSFET unit includes a plurality of cells and a boundary

surrounding the cells. In one embodiment of the present invention, the cell is configuredto provide a unit current, and comprises at least one source pillar and at least one drainpillar, a gate conductor surrounding the source pillar and the drain pillar, and an

insulating structure electrically separating the gate conductor from the source pillar andthe drain pillar, wherein the gate conductor extends from the cell to the boundary.

申请人：PTEK TECHNOLOGY CO., LTD.

地址：Hsinchu City TW

国籍：TW

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