BU406

BU406/406H/408

NPN Epitaxial Silicon Transistor

Features

•High Voltage Switching

•Use In Horizontal Deflection Output Stage

1

TO-220

1.Base 2.Collector 3.Emitter

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol

VCBO VCEO VEBO IC ICP IB PC TJ TSTG

Parameter

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature

Value

400200 6 7 10 4 60150- 55 to 150

Units

VVVAAAW°C°C

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol

ICES

Parameter

Collector Cut-off Current

Test Condition

VCE = 400V, VBE = 0 VCE = 250V, VBE = 0

VCE = 250V, VBE = 0 @ TC=150°C VBE = 6V, IC = 0 IC = 5A, IB = 0.5A IC = 5A, IB = 0.8A IC = 6A, IB = 1.2A IC = 5A, IB = 0.5A IC = 5A, IB = 0.5A IC = 6A, IB = 1.2A VCE = 10V, IC = 0.5A IC = 5A, IB = 0.5A IC = 5A, IB = 0.8A IC = 6A, IB = 1.2A

Min.Max.

5100111111.21.21.5

Units

mAμAmAmAVVVVVVMHzμsμsμs

IEBO VCE(sat)

Emitter Cut-off Current

Collector-Emitter Saturation Voltage

: BU406: BU406H: BU408 Base-Emitter Saturation Voltage

: BU406: BU406H: BU408

Current Gain Bandwidth Product Turn Off Time

: BU406: BU406H: BU408

VBE(sat)

fT

tOFF

10

0.750.40.4

© 2012 Fairchild Semiconductor CorporationBU406/406H/408 Rev. B0

www.fairchildsemi.com

1

www.foruic.comBU406/406H/408 — NPN Epitaxial Silicon TransistorTypical Performance Characteristics 5A00mIB = 2mA 18060mAIB =IB = 140mA1000IC[A], COLLECTOR CURRENT4IB = 10mAIB = 12VCE = 5VhFE, DC CURRENT GAIN0mAIB = 10mAIB = 80IB = 60mAmAIB = 4010032IB = 20mA110001234567101110100100010000VCE[V], COLLECTOR-EMITTER VOLTAGEIC[mA], COLLECTOR CURRENTFigure 1. Static CharacteristicVCE(sat)[V], VBE(sat)[V]SATURATION VOLTAGE 100001000Figure 2. DC current Gain IC = 10 IBf = 1MHz 1000VBE(sat)Cob [pF], CAPACITANCE100 10010VCE(sat)101101001000100001110100IC[mA], COLLECTOR CURRENTVCB[V], COLLECTOR-BASE VOLTAGEFigure 3. Base-Emitter Saturation VoltageCollector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance8070IC[A], COLLECTOR CURRENTIC Max. (Pulsed)10IC Max. (Continuous)ipssDiioats0m10itedmLin PC [W], POWER DISSIPATIOAN605040302010010.1110100VCE MAX.02550o75100125150175200VCE[V], COLLECTOR-EMITTER VOLTAGETC[C], CASE TEMPERATUREFigure 5. Safe Operating AreaFigure 6. Power Derating© 2012 Fairchild Semiconductor CorporationBU406/406H/408 Rev. B0

www.fairchildsemi.com2

www.foruic.com 1msm10sditeimb LS/BU406/406H/408 — NPN Epitaxial Silicon TransistorPhysical DimensionsTO-2209.90 ±0.201.30 ±0.102.80 ±0.104.50 ±0.20(8.70)ø3.60 ±0.10(1.70)1.30–0.05+0.109.20 ±0.20(1.46)13.08 ±0.20(1.00)(3.00)15.90 ±0.201.27 ±0.101.52 ±0.100.80 ±0.102.TYP[2. ±0.20]2.TYP[2. ±0.20]10.08 ±0.3018.95MAX.(3.70)(45°)0.50–0.05+0.102.40 ±0.2010.00 ±0.20Dimensions in Millimeters© 2012 Fairchild Semiconductor CorporationBU406/406H/408 Rev. B0

www.fairchildsemi.com3

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