Write pre-compensation for nonvolatile memory

专利名称：Write pre-compensation for nonvolatile

memory

发明人：Zining Wu,Xueshi Yang,Pantas Sutardja申请号：US13251822申请日：20111003公开号：US083581B1公开日：20130122

专利附图：

摘要：A system including a programming module and an interference module. Theprogramming module is configured to determine a programming value to which a stateof a target cell is to be programmed, wherein the programming value is determined

based on states of one or more cells near the target cell. The interference module isconfigured to generate interference values based on (i) the state of the target cell and (ii)the states of the one or more cells near the target cell. The programming module isfurther configured to determine the programming value based on at least one of theinterference values selected according to (i) the state of the target cell and (ii) the statesof the one or more cells near the target cell.

申请人：Zining Wu,Xueshi Yang,Pantas Sutardja

地址：Los Altos CA US,Cupertino CA US,Los Gatos CA US

国籍：US,US,US

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