专利名称：Through vias and methods of formation
thereof
发明人：Helmut Brech,Albert Birner申请号：US15981662申请日：20180516公开号：US11031327B2公开日：20210608
专利附图：
摘要：In accordance with an embodiment of the present invention, a semiconductorchip includes a device region disposed in or over a substrate, a doped region disposed inthe device region, and a through via disposed in the substrate. The through via extends
through the doped region.
申请人：Infineon Technologies AG
地址：Neubiberg DE
国籍：DE
代理机构：Slater Matsil, LLP
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