Advance Technical InformationHigh Voltage
IGBT with Diode
Electrically Isolated Tab
IXGR 32N170AH1
VCESIC25
VCE(sat)tfi(typ)
====1700V 26A 5.2V 50ns
SymbolVCESVCGRVGESVGEMIC25IC90IF90ICM
SSOA(RBSOA)tSCPCTJTJMTstgFCVISOL
Test ConditionsTJ= 25°C to 150°C
TJ= 25°C to 150°C; RGE = 1 MΩContinuousTransientTC= 25°CTC= 90°CTC= 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 5ΩClamped inductive load
TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10ΩTC= 25°C
Maximum Ratings
17001700±20±30261714200 ICM = 70@ 0.8 VCES
10200
-55 ... +150
150
-55 ... +150
VVVVAAA
AAµsW°C°C°CN/lb~V°C
5
g
ISOPLUS247 (IXGR) E153432
GCEISOLATED TABC = Collector,
G = Gate,E = Emitter
Featuresz
Electrically Isolated tabz
High current handling capabilityz
MOS Gate turn-on-drive simplicityz
Rugged NPT structurez
Molding epoxies meet UL 94 V-0flammability classification
Applicationsz
Capacitor discharge & pulser circuitsz
AC motor speed controlz
DC servo and robot drivesz
DC choppersz
Uninterruptible power supplies (UPS)z
Switched-mode and resonant-modepower supplies
Mounting force with clamp50/60 Hz, 1 minute
22...130/5...30
2500300
Maximum lead temperature for soldering1.6 mm (0.062 in.) from case for 10 sWeight
SymbolTest Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.typ.max.
17003.0
Note 1
TJ = 125°C
VVµAmAnAVV
BVCESVGE(th)ICESIGESVCE(sat)
ICIC= 1mA, VGE = 0 V= 250 µA, VCE = VGE
5.05008±100
VCE= 0.8 • VCESVGE= 0 V
VCE= 0 V, VGE = ±20 VIC
= IC90, VGE = 15 V
TJ = 125°C
4.24.8
5.2
© 2004 IXYS All rights reserved
DS99233(11/04)
元器件交易网www.cecb2b.com
IXGR 32N170AH1SymbolTest ConditionsCharacteristic Values(TJ = 25°C unless otherwise specified)min.typ.max.25333700VCE = 25 V, VGE = 0 V, f = 1 MHz18044155IC = IC90, VGE = 15 V, VCE = 0.5 VCESInductive load, TJ = 25°CIC = IC90, VGE = 15 VRG = 2.7 Ω, VCE = 0.8 VCESNote 330514657270501.5Inductive load, TJ = 125°CIC = IC90, VGE = 15 VRG = 2.7 Ω, VCE = 0.8 VCESNote 348422.5300702.4500100SpFpFpFnCnCnCnsnsnsns ISOPLUS247 OutlinegfsCiesCoesCresQgQgeQgctd(on)tritd(off)tfiEofftd(on)triEontd(off)tfiEoffRthJCRthCKIC= IC25; VCE = 10 VNote 23.0mJnsnsmJnsnsmJ0.65K/WK/W0.15See IXGX32N170AH1 forcharcteristic curvesReverse Diode (FRED)SymbolVFIRMtrrRthJCTest ConditionsIF = 20A, VGE = 0 V, Note 2Characteristic Values(TJ = 25°C, unless otherwise specified)min.typ.max.2.750150VAns1.5K/WIF = 50A, VGE = 0 V, -diF/dt = 800 A/µsVR = 600 VDevice must be heatsunk for high temperature leakage currentmeasurements to avoid thermal runaway.2.Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
3.Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG.
4.See DH60-18A and IXGH32N170A datasheets for additional
characteristics
Notes:1.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents:
4,835,5924,850,0724,881,106
4,931,8445,017,5085,034,796
5,049,9615,063,3075,187,117
5,237,4815,381,0255,486,715
6,162,6656,259,123 B16,306,728 B1
6,404,065 B16,534,3436,583,505
6,683,3446,710,405B26,710,463
6,727,5856,759,692
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