GR-468-CORE-条件中文-4

4.1 性能Characterization

4.1.1 性能测试Characterization Tests

R4-2 [106v2] 光电器件应该测试光性能和电性能

R4-4 [420] 对于所有器件，在常温下测试的一些参数需要在工作温度的极限条件下测试。 R4-5 [421] 对于可调激光器，需要在最大、最小、和中心工作波长条件下测试参数。

O4-6 [422] 除非出现下列情况，对于集成模块的参数需要在4.4.2（表4-6）中列的三个震动或冲击条件下测试。

如果集成模块显示出对震动和冲击不敏感，则O4-6 [422]将不需要进行。

CR4-7 [423] 所有的器件需要在温度变化率为1°C/minute 的条件下测试性能。

R4-8 [110v2] 在diode和module levels级别里，至少需要20个器件进行特性相关的测试，而在integrated modules 里，则至少需要10个器件进行测试，且都要求没有失效发生。 表4-2 器件的物理特性 参数 内部湿气(internal moisture) 气密性(hermeticity) Additional Information 3.2.10.1.1 取样 LTPD SS 20 11 C 0 应用 对所有的密封模块 3.2.10.1.2 3.2.10.2.1 M, 测试器件ESD的失效值 20 11 0 对所有密封的光电器件1 - 6 02 所有的光电模块 3ESD 3.2.10.2.2 ±8 and ±15 kV discharges as per GR-78-CORE 3.2.10.3 - 3或5 3.2.10.4 20 11 0 5- 2 0 对所有的集成模块 4可燃性(Flammability) 剪切强度(die shear strength) 可焊性(solderability) 打线强度(wire bond strength) 所有的光电模块和集成模块6 所有的光电二极管(子组装) 所有的光电模块 所有的光电二极管(子组装) 3.4.10.5 20 11 0 3.4.10.6 20 11 0 表4-2的备注：

1 May be performed on non-functional devices that are mechanically identical to the functional devices with the exception that any fiber pigtails/boots have been cut off.

2 ESD门限测试是破坏性实验。“0”这里是指当器件加载的ESD测试电压小于ESD的最低可接受电压（500V）时，可接受的失效数。

3 当模块或集成模块的所有组件的ESD门限都大于4000V时，或者器件是铌酸锂调制器等对ESD不敏感的器件时，ESD测试时用此条件。

4 如果集成模块没有施加ESD电压的那些版，这时ESD测试将使用另外一个条件(见3.2.10.2.2)。

5 针焰测试和含氧量测试需要3个样品，UL 94 测试需要5个样品

6 不可燃密封金属或陶瓷封装不需要进行可燃性实验。但是，如果这些封装附有任何可燃性材料，则需要进行此实验。

4.1.2 特性测试的Pass/Fail 标准aracterization Test Pass/Fail Criteria

R4-11 [426] 除非合R3-7 [415] 描述的情况, 器件供应商和设备制造商应的内部水气测试（internal moisture test）需要满足下面的要求

• 单位体积的水气含量应小于或等于5000ppm. 4.2 应力测试Stress Tests

4.2.1 机械应力和环境应力测试Mechanical Integrity and Environmental Stress Tests

表4-3 机械应力测试

测试项目 参考 3.3.1.1 条件 Condition A(500g, 1.0ms),5times/direction5 应用2,3 所有光电二极管和模块 所有重量≤0.225kg的集成模块 所有重量>0.225kg但≤1.0kg的集成模块 机械冲击4 300g,3ms,5times/direction5 50g,11ms, 5times/direction5 3.3.1.1 Condition A (20g),20 to 2000 to 20Hz,4min/cy,4cy/axis,non-powered 5g,10 to 100 to 10Hz,1min/cy,10cy/axis,powered 3.3.1.3.1 0.5kg,10cycles from 0°to 90°to -90°to 0°,3cm from device housing or strain relief 光纤扭转 1.0kg,10cycles from 0°to 90°to -90°to 0°,3cm from device housing or strain relief 热冲击 3.3.1.2 condition A(0 and 100 c),可以使用冰水和沸水 机械振动 对所有密封的光电器件1 所有的光电模块 3对所有的集成模块 4所有的气密性光电模块 所有的光电二极管(子组装) 所有的光电模块 所有的光电二极管(子组装)

Notes for Table 4-3:

1 As discussed in Section 3.1.4, the conditions shown correspond to minimum acceptable levels of stress, and alternate conditions may be used (with technical justification) in some situations. 2 In all cases, the applicability of the test is independent of the particular environment in which the device is specified to operate (i.e., CO or UNC).

3 With the possible exceptions discussed in Section 4.4.1 for the case of integrated modules, the applicable LTPD, SS and C values are 20, 11 and 0.

4 In cases where mechanical shock and vibration tests are both performed, R3-13 [417] indicates that the same sample of devices must be used for both tests.

5 See R3-14 [418] regarding the treatment of devices that are not designed to withstand the mechanical shock test conditions listed here.

6 See Section4.3.2 of GR-63-CORE for mechanical shock test conditions for integrated modules that are greater than 1kg.

7 Applies unless the integrated module is based on technology that has previously been shown to be insensitive to vibration conditions similar to those listed here (as justified and documented by the device supplier or equipment manufacturer).

8 If there is no change in the fiber attachment or routing when a module is incorporated into an integrated module, and if fiber integrity tests were performed at the module level, then these tests do not need to be repeated at the integrated module level.

9 This test applies to loose-buffered fiber where the buffer material is attached to the component and is used as a strength member. Where the buffer material is not used as a strength member, the less stressful test for coated and tight-buffered fiber applies instead (see Section 3.3.1.3).

Notes for Table 4-4:

1 As discussed in Section 3.1.4, the conditions shown correspond to minimum acceptable levels of stress, and alternate conditions may be used (with technical justification) in some situations. In addition, if a device’s minimum or maximum specified storage temperature is more extreme than the temperature listed here for the corresponding storage test, then that more extreme value needs to be used in the test. 2 With the possible exceptions discussed in Section 4.4.1 for the case of integrated modules, the applicable LTPD, SS and C values are 20, 11 and 0.

3 See Sections 3.3.2.1 and 3.3.3.1.3 regarding cases where it may not be necessary to perform both the high-temperature storage test and the high-temperature operations test.

4 Following the completion of the nondestructive measurements used in the pass/fail determination for this test, the test conditions may be reapplied to a subset of the devices for additional cycles as specified in Table 5-1 (i.e., for accelerated aging test purposes). If destructive measurements (e.g., an internal moisture test) are used in the pass/fail determination, the results of the measurements performed on the devices that are not used in the accelerated aging test may be considered applicable to the entire set of samples for this test.

5 If desired, hermetic modules may be biased during this test. In addition, see Sections 3.3.2.3 and 3.3.3.3 regarding cases where it may not be necessary to perform both non-powered and powered damp heat tests on non-hermetic devices.

Notes for Table 4-5: 1 See Section 4.4.1 regarding possible exceptions to the minimum sample size requirement for the case of testing of integrated modules. 2 As discussed in Section 3.1.4, the conditions shown generally correspond to minimum acceptable levels of stress, and alternate conditions may be used (with technical justification) in some situations. The one exception to this “minimum acceptable levels of stress” statement is the case of a photodiode with a non-negligible wearout failure rate. In that case the alternate conditions will generally be less stressful than those listed above for photodiodes. On the other hand, the alternate conditions need to be consistent with the guidelines provided in Section 3.3.3.1 for other devices, and still must be technically justified. Finally, if a device’s maximum specified operating temperature is higher than the temperature listed here for the high-temperature operations test, that higher value needs to be used in the test. 3 Following the completion of the nondestructive measurements used in the pass/fail determination for this test, the test conditions may be reapplied to a subset of the devices for additional hours as specified in Table 5-1 (i.e., for accelerated aging test purposes). If destructive measurements (e.g., an internal moisture test) are used in the pass/fail determination, the results of the measurements performed on the devices that are not used in the accelerated aging test may be considered applicable to the entire set of samples for this test. 4 For lasers, high-temperature operations and accelerated aging tests are often performed under APC, in which a feedback circuit adjusts the drive current for constant optical output (typically the maximum rated power at the test temperature). However, in other cases these tests are done using ACC, in which case the drive current is kept constant (and typically at the maximum rated level) regardless of the optical output power. In addition, see Section 3.3.3.1.2 regarding the wavelength settings for high-temperature operations testing of tunable lasers. 5 For EA and external modulators, the relevant variables may include the modulation rate and voltage, the DC bias voltage, and the optical power level. In general, each of these needs to be addressed, and the selected values justified by the device supplier or equipment manufacturer. 6 See Sections 3.3.2.1 and 3.3.3.1.3 regarding cases where it may not be necessary to perform both the high-temperature storage test and the high-temperature operations test. 7 See Section 3.3.3.1.2 regarding the modulation rate for high-temperature operations testing of external modulators. 8 May be reduced to 10 cycles in some cases

(see Section 3.3.3.2). 9 See Sections 3.3.2.3 and 3.3.3.3 regarding cases where it may not be necessary to perform both non-powered and powered damp heat tests.