专利名称：Rewrite prevention in a variable resistance
memory
发明人：John Moore,R. Jacob Baker申请号：US11070213申请日：20050303公开号：US07224632B2公开日：20070529
专利附图：
摘要：A variable resistance memory cell is read by a sense amplifier but withoutrewriting the contents of the memory cell. If the memory cell has an access transistor,the access transistor is switched off to decouple the cell from the bit line after a
predetermined amount of time. The predetermined amount of time is sufficiently longenough to permit the logical state of the cell to be transferred to the bit line and alsosufficiently short to isolate the cell from the bit line before the sense amplifier operates.For memory cells which do not utilize an access transistor, an isolation transistor may beplaced in the bit line located between and serially connection the portion of the bit linefrom the sense amplifier to the isolation transistor and the portion of the bit line fromthe isolation transistor to the memory cell. The isolation transistor, normally conducting,is switched off after the predetermined time past the time the bit line begins todischarge through the memory cell, thereby isolating the memory cell from the senseamplifier before a sensing operation begins.
申请人：John Moore,R. Jacob Baker
地址：Boise ID US,Boise ID US
国籍：US,US
代理机构：Dickstein Shapiro LLP
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