搜索
您的当前位置:首页正文

METHOD FOR MEASURING THICKNESS VARIATIONS IN A LAY

来源:筏尚旅游网
专利内容由知识产权出版社提供

专利名称:METHOD FOR MEASURING THICKNESS

VARIATIONS IN A LAYER OF A MULTILAYERSEMICONDUCTOR STRUCTURE

发明人:KONONCHUCK, Oleg申请号:EP15306552.9申请日:20151002公开号:EP3150959A1公开日:20170405

专利附图:

摘要:The invention relates to a method for measuring thickness variations in a firstlayer (1) of a multilayer semiconductor structure (S), comprising: - acquiring, with an

image acquisition system, an image of at least one zone of the surface of said structure,said image being obtained by reflecting a quasi-monochromatic light flux on said zone ofthe surface of said structure, - processing said acquired image so as to determine, fromintensity variations of the light reflected by said zone of the surface, a map of thethickness variations of said first layer (1), said treatment comprising comparing theintensity of each pixel of the image with a predetermined calibration curve defining arelationship between the intensity of a pixel of the acquired image and a local thicknessof the first layer (1), said calibration curve being determined for a given thickness of asecond layer (2) of the structure different from the first layer (1), wherein the wavelengthof said quasi-monochromatic light flux is selected so as to correspond to a minimum ofthe sensitivity of the reflectivity with respect to said second layer (2), said method beingcharacterized in that it further comprises: - measuring the thickness of the second layer(2) in said at least one zone of the surface of the structure, - if said measured thickness isdifferent from the thickness of the second layer (2) considered in the calibration curve,applying a correction curve to the map of the thickness variations, wherein said correctioncurve defines, for said measured thickness of the second layer (2), a relationship betweena thickness of the first layer (1) and a correction factor to apply to the map of thethickness variations of the first layer (1), so as to determine a corrected map of thicknessvariations of the first layer.

申请人:Soitec

地址:Chemin des Franques Parc Technologique des Fontaines 38190 Bernin FR

国籍:FR

代理机构:Regimbeau

更多信息请下载全文后查看

因篇幅问题不能全部显示,请点此查看更多更全内容

Top