专利名称：CRUCIBLE FOR CRYSTALLIZATION OF
MOLTEN SILICON, PROCESS FOR ITSMANUFACTURE AND USE THEREOF
发明人：LAURENT, Julien,DRODE, Etienne,MARTIN,
Christian
申请号：EP17746135.7申请日：20170803公开号：EP3494247A1公开日：20190612
摘要：Crucible for the crystallization of molten silicon coated with silicon nitride whereembedded SiO particles having a particle size up to 500 µm and a surface density ≥ 100cm, emerge in the inner volume of the crucible enabling the production of silicon ingotwith improved electrical properties.
申请人：Vesuvius France S.A.
地址：68 Rue Paul Deudon 59750 Feignies FR
国籍：FR
代理机构：Brohez, Véronique
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