FQD5N60C / FQU5N60CElectrical Characteristics T = 25°C unless otherwise noted
C
SymbolParameterTest ConditionsMinTypMaxUnits
Off Characteristics
BVDSS∆BVDSS/ ∆TJIDSSIGSSFIGSSR
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain CurrentGate-Body Leakage Current, ForwardGate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°CVDS = 600 V, VGS = 0 VVDS = 480 V, TC = 125°CVGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V
600------------0.6------------110100-100
VV/°CµAµAnAnA
On Characteristics
VGS(th)RDS(on)gFS
Gate Threshold Voltage Static Drain-Source On-Resistance
Forward Transconductance
VDS = VGS, ID = 250 µAVGS = 10 V, ID = 1.4 A
VDS = 40 V, ID = 1.4 A (Note 4)
2.0------2.04.7
4.02.5--VΩS
Dynamic Characteristics
CissCossCrss
Input CapacitanceOutput Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
------
515556.5
670728.5
pFpFpF
Switching Characteristics
td(on)trtd(off)tfQgQgsQgd
Turn-On Delay TimeTurn-On Rise TimeTurn-Off Delay TimeTurn-Off Fall TimeTotal Gate ChargeGate-Source ChargeGate-Drain Charge
VDD = 300 V, ID = 4.5A,RG = 25 Ω
(Note 4, 5)
--------------
10423846152.56.6
30908510019----
nsnsnsnsnCnCnC
VDS = 480 V, ID = 4.5A,VGS = 10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
ISISMVSDtrrQrr
Maximum Continuous Drain-Source Diode Forward CurrentMaximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 2.8 A Drain-Source Diode Forward VoltageReverse Recovery TimeReverse Recovery Charge
VGS = 0 V, IS = 4.5 A,
dIF / dt = 100 A/µs (Note 4)
----------------3002.2
2.811.21.4----AAVnsµC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature2. L = 18.9mH, IAS = 4.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C3. ISD ≤ 4.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%5. Essentially independent of operating temperature
©2003 Fairchild Semiconductor Corporation Rev. A, October 2003
FQD5N60C / FQU5N60CTypical Characteristics 101ID, Drain Current [A]ID, Drain Current [A]100 VGSTop : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 VBottom : 4.5 V101150C-55C100oo 25Co10-1※ Notes : 1. 250μs Pulse Test 2. TC = 25℃※ Notes : 1. VDS = 40V 2. 250μs Pulse Test10-210-1-110100101246810VDS, Drain-Source Voltage [V]VGS, Gate-Source Voltage [V]Figure 1. On-Region Characteristics 6Figure 2. Transfer Characteristics 5101RDS(ON) [Ω],Drain-Source On-Resistance4VGS = 10V 1002VGS = 20V1※ Note : TJ = 25℃150℃25℃10-1※ Notes : 1. VGS = 0V 2. 250μs Pulse Test002468100.20.40.60.81.01.21.4ID, Drain Current [A]VSD, Source-Drain voltage [V]Figure 3. On-Resistance Variation vsDrain Current and Gate VoltageFigure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 12 1000Ciss = Cgs + Cgd (Cds = shorted)Coss = Cds + CgdCrss = Cgd80010VDS = 120VVDS = 300VCissVGS, Gate-Source Voltage [V]8VDS = 480VCapacitance [pF]600400※ Notes ; 1. VGS = 0 V 2. f = 1 MHz 4200Crss2※ Note : ID = 4.5A0-11001001010481216VDS, Drain-Source Voltage [V]QG, Total Gate Charge [nC]Figure 5. Capacitance CharacteristicsFigure 6. Gate Charge Characteristics©2003 Fairchild Semiconductor Corporation Rev. A, October 2003
Coss6 3IDR, Reverse Drain Current [A] FQD5N60C / FQU5N60CTypical Characteristics (Continued) 1.23.0 2.5BVDSS, (Normalized)Drain-Source Breakdown VoltageRDS(ON), (Normalized)Drain-Source On-Resistance1.12.0 1.0※ Notes : 1. VGS = 10 V 2. ID = 1.4 A0.9※ Notes : 1. VGS = 0 V 2. ID = 250 μA0.50.8-100-50050100o1502000.0-100-50050100o150200TJ, Junction Temperature [C]TJ, Junction Temperature [C]Figure 7. Breakdown Voltage Variationvs Temperature 3.0Operation in This Area is Limited by R DS(on)Figure 8. On-Resistance Variationvs Temperature 1012.510 µs100 µs1 msID, Drain Current [A]10010 ms100 msDCID, Drain Current [A]2.01.010-1※ Notes : 1. TC = 25 Co 2. TJ = 150 C 3. Single Pulseo0.510-21001011021030.0255075100125150VDS, Drain-Source Voltage [V]TC, Case Temperature [℃]Figure 9. Maximum Safe Operating AreaFigure 10. Maximum Drain Currentvs Case Temperature (t), Thermal ResponseD=0.51000.20.10.0510-1※ Notes : 1. ZθJC(t) = 2.56 ℃/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t)PDMt1t2 θJC0.020.01single pulseZ10-510-410-310-210-1100101t1, Square Wave Pulse Duration [sec]Figure 11. Transient Thermal Response Curve ©2003 Fairchild Semiconductor Corporation Rev. A, October 2003
1.5 1.01.5FQD5N60C / FQU5N60C Gate Charge Test Circuit & Waveform50KΩ12V200nF300nFSame Typeas DUTVDSVGSQg10VQgsQgdVGSDUT3mACharge Resistive Switching Test Circuit & WaveformsVDSRGVGSRLVDDVDS90%10VDUTVGS10%td(on)tontrtd(off)tofftf Unclamped Inductive Switching Test Circuit & WaveformsLVDSIDRG10Vt pBVDSS12------------------------EAS =LIAS2BVDSS-VDDBVDSSIASVDDID (t)VDDt pDUTVDS (t)Time©2003 Fairchild Semiconductor Corporation Rev. A, October 2003
FQD5N60C / FQU5N60C Peak Diode Recovery dv/dt Test Circuit & WaveformsDUT+VDS_ISDLDriverRGSame Type as DUTVDDVGS•dv/dtcontrolled by RG•ISDcontrolled by pulse period VGS( Driver )Gate Pulse WidthD =--------------------------Gate Pulse Period10VIFM, Body Diode Forward CurrentISD( DUT )IRMdi/dtBody Diode Reverse CurrentVDS( DUT )Body Diode Recoverydv/dtVSDVDDBody DiodeForward Voltage Drop©2003 Fairchild Semiconductor Corporation Rev. A, October 2003
FQD5N60C / FQU5N60CPackage DimensionsD-PAK6.60 ±0.205.34 ±0.30(0.50)(4.34)(0.50)0.70 ±0.202.30 ±0.100.50 ±0.100.60 ±0.206.10 ±0.202.70 ±0.209.50 ±0.300.91 ±0.100.80 ±0.20MAX0.962.30TYP[2.30±0.20]0.76 ±0.102.30TYP[2.30±0.20]0.89 ±0.100.50 ±0.101.02 ±0.202.30 ±0.20(0.70)(0.90)(0.10)(3.05)6.10 ±0.209.50 ±0.302.70 ±0.20(2XR0.25)0.76 ±0.10Dimensions in Millimeters©2003 Fairchild Semiconductor Corporation
Rev. A, October 2003
(1.00)6.60 ±0.20(5.34)(5.04)(1.50)MIN0.55FQD5N60C / FQU5N60CPackage Dimensions (Continued)I-PAK6.60 ±0.205.34 ±0.20(0.50)(4.34)(0.50)0.50 ±0.102.30 ±0.200.60 ±0.200.70 ±0.200.80 ±0.106.10 ±0.201.80 ±0.20MAX0.960.76 ±0.109.30 ±0.302.30TYP[2.30±0.20]2.30TYP[2.30±0.20]0.50 ±0.10Dimensions in Millimeters©2003 Fairchild Semiconductor Corporation
Rev. A, October 2003
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PRODUCT STATUS DEFINITIONSDefinition of Terms
Datasheet IdentificationAdvance Information
Product StatusFormative or In DesignFirst Production
Definition
This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.
This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.
Preliminary
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©2003 Fairchild Semiconductor CorporationRev. I5
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