MM54HC51MM74HC51DualAND-OR-InvertGateMM54HC58MM74HC58DualAND-ORGateJanuary1988
MM54HC51MM74HC51DualAND-OR-InvertGateMM54HC58MM74HC58DualAND-ORGate
GeneralDescription
Thesegatesutilizeadvancedsilicon-gateCMOStechnologytoachieveoperatingspeedssimilartoLS-TTLgateswiththelowpowerconsumptionofstandardCMOSintegratedcircuitsAllgateshavebufferedoutputsprovidinghighnoiseimmunityandtheabilitytodrive10LS-TTLloadsThe54HC74HClogicfamilyisfunctionallyaswellaspin-outcompatiblewiththestandard54LS74LSlogicfamilyAllinputsareprotectedfromdamageduetostaticdischargebyinternaldiodeclampstoVCCandground
Features
YYY
YY
Typicalpropagationdelay10nsWidepowersupplyrange2–6V
Lowquiescentsupplycurrent20mAmaximum(74Series)
Lowinputcurrent1mAmaximumHighoutputcurrent4mAminimum
ConnectionDiagrams
Dual-In-LinePackage
TLF5302–1
TopView
OrderNumberMM54HC51orMM74HC51
Dual-In-LinePackage
TLF5302–2
TopView
OrderNumberMM54HC58orMM74HC58
C1995NationalSemiconductorCorporationTLF5302RRD-B30M105PrintedinUSA
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AbsoluteMaximumRatings(Notes12)
IfMilitaryAerospacespecifieddevicesarerequiredpleasecontacttheNationalSemiconductorSalesOfficeDistributorsforavailabilityandspecificationsSupplyVoltage(VCC)DCInputVoltage(VIN)DCOutputVoltage(VOUT)ClampDiodeCurrent(IIKIOK)
b05toa70Vb15toVCCa15Vb05toVCCa05V
g20mA
OperatingConditions
SupplyVoltageVCCDCInputorOutputVoltageVINVOUT
OperatingTempRange(TA)MMHCMMHC
InputRiseorFallTimestrtfVCCeV
VCCeVVCCeV
Min
MaxVCC
UnitsVV
g25mADCOutputCurrentperpin(IOUT)
g50mADCVCCorGNDCurrentperpin(ICC)
b65Ctoa150CStorageTemperatureRange(TSTG)
PowerDissipation(PD)(Note3)600mWSOPackageonly500mWLeadTemp(TL)(Soldering10seconds)260C
b
baaCC
nsnsns
DCElectricalCharacteristics(Note4)
SymbolVIH
ParameterMinimumHighLevelInputVoltageMaximumLowLevelInputVoltageMinimumHighLevelOutputVoltage
VINeVIHorVILlIOUTlsmAConditions
VCCVVVVVVVVVVVVVVVVVV
TAe25CTyp
g
74HC
TAeb40to85C
g
54HC
TAeb55to125C
g
UnitsVVVVVVVVVVVVVVVVmAmA
GuaranteedLimits
VIL
VOH
VINeVIHorVILlIOUTlsmAlIOUTlsmA
VOL
MaximumLowLevelOutputVoltage
VINeVIHorVILlIOUTlsmA
VINeVIHorVILlIOUTlsmAlIOUTlsmA
IINICC
MaximumInputCurrent
MaximumQuiescentSupplyCurrent
VINeVCCorGNDVINeVCCorGNDIOUTemA
Note1AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamagetothedevicemayoccurNote2Unlessotherwisespecifiedallvoltagesarereferencedtoground
Note3PowerDissipationtemperaturederatingplastic‘‘N’’packageb12mWCfrom65Cto85Cceramic‘‘J’’packageb12mWCfrom100Cto125CNote4Forapowersupplyof5Vg10%theworstcaseoutputvoltages(VOHandVOL)occurforHCat45VThusthe45VvaluesshouldbeusedwhendesigningwiththissupplyWorstcaseVIHandVILoccuratVCCe55Vand45Vrespectively(TheVIHvalueat55Vis385V)Theworstcaseleakagecurrent(IINICCandIOZ)occurforCMOSatthehighervoltageandsothe60Vvaluesshouldbeused
VILlimitsarecurrentlytestedat20%ofVCCTheaboveVILspecification(30%ofVCC)willbeimplementednolaterthanQ1CY’89
2
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ACElectricalCharacteristicsVCCe5VTAe25CCLe15pFtretfe6ns
SymboltPHLtPLH
ParameterMaximumPropagationDelay
Conditions
Typ10
Guaranteed
Limit
20
Unitsns
ACElectricalCharacteristicsVCCe20Vto60VCLe50pFtretfe6ns(unlessotherwisespecified)
SymboltPHLtPLH
ParameterMaximumPropagationDelay
MaximumOutputRiseandFallTimePowerDissipationCapacitance(Note5)MaximumInputCapacitance
(perAND-OR-Gate)
Conditions
VCC20V45V60V20V45V60V
TAe25CTyp6313113087205
10
10
10
1252521751513
74HCTAeb40to85C
1583227951916
GuaranteedLimits
18637321102219
nsnsnsnsnsnspFpF
54HC
TAeb55to125C
Units
tTLHtTHL
CPDCIN
Note5CPDdeterminesthenoloaddynamicpowerconsumptionPDeCPDVCC2faICCVCCandthenoloaddynamiccurrentconsumptionISeCPDVCCfaICC
3
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MM54HC51MM74HC51DualAND-OR-InvertGateMM54HC58MM74HC58DualAND-ORGatePhysicalDimensionsinches(millimeters)
OrderNumbersMM54HC51JMM54HC58JMM74HC51JMM74HC58J
NSPackageJ14A
OrderNumbersMM74HC51NMM74HC58N
NSPackageN14A
LIFESUPPORTPOLICY
NATIONAL’SPRODUCTSARENOTAUTHORIZEDFORUSEASCRITICALCOMPONENTSINLIFESUPPORTDEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFTHEPRESIDENTOFNATIONALSEMICONDUCTORCORPORATIONAsusedherein1Lifesupportdevicesorsystemsaredevicesorsystemswhich(a)areintendedforsurgicalimplantintothebodyor(b)supportorsustainlifeandwhosefailuretoperformwhenproperlyusedinaccordancewithinstructionsforuseprovidedinthelabelingcanbereasonablyexpectedtoresultinasignificantinjurytotheuser
NationalSemiconductorCorporation1111WestBardinRoad2Acriticalcomponentisanycomponentofalifesupportdeviceorsystemwhosefailuretoperformcanbereasonablyexpectedtocausethefailureofthelifesupportdeviceorsystemortoaffectitssafetyoreffectiveness
NationalSemiconductorEuropeFax(a49)0-180-5308586NationalSemiconductorHongKongLtd13thFloorStraightBlockNationalSemiconductorJapanLtdTel81-043-299-2309
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