专利名称：SRAM device发明人：Hiroyuki Yamauchi申请号：US11101467申请日：20050408
公开号：US20050174870A1公开日：20050811
专利附图：
摘要：In a CMOS type SRAM device having a 6-transistor configuration, only a drivetransistor and an access transistor of one unit circuit are designed with a larger size, withthe other four transistors having a smaller size.
申请人：Hiroyuki Yamauchi
地址：Osaka JP
国籍：JP
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