Metallization etching techniques for reducing post

专利名称：Metallization etching techniques for

reducing post-etch corrosion of metal lines

发明人：Martin Gutsche,Peter Strobl,Stephan

Wege,Eike Lueken,Georg Stojakovic,BrunoSpuler

申请号：US09153390申请日：19980915公开号：US06177353B1公开日：20010123

专利附图：

摘要：A method for reducing polymer deposition on vertical surfaces of metal lines

etched from a metallization layer disposed above a substrate. The method includesforming a hard mask layer above the metallization layer and providing a photoresistmask above the hard mask layer. The method further includes employing the photoresistmask to form a hard mask from the hard mask layer. The hard mask has patterns thereinconfigured to form the metal lines in a subsequent plasma-enhanced metallization etch.There is also included removing the photoresist mask. Additionally, there is includedperforming the plasma-enhanced metallization etch employing the hard mask and anetchant source gas that includes Cland at least one passivation-forming chemical, whereinthe plasma-enhanced metallization etch is performed without employing photoresist toreduce the polymer deposition during the plasma-enhanced metallization etch.

申请人：INFINEON TECHNOLOGIES NORTH AMERICA CORP.

代理人：Stanton Braden

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