System and method for dampening high pressure impa

专利名称：System and method for dampening high

pressure impact on porous materials

发明人：Ching-Ya Wang,Ping Chuang,Yu-Liang

Lin,Mei-Sheng Zhou,Henry Lo

申请号：US10422339申请日：20030424公开号：US06875285B2公开日：20050405

专利附图：

摘要：System and method for reducing damage to a semiconductor substrate whenusing cleaning fluids at elevated pressures to clean the semiconductor substrates. A

preferred embodiment comprises applying the cleaning fluid at a first pressure for a firsttime period, wherein the first pressure is relatively low, and then increasing the pressureof the cleaning fluid to a pressure level that can effectively clean the semiconductorsubstrate and maintaining the pressure level for a second time period. The application ofthe cleaning fluid at the relatively low initial pressure acts as a temporary filler andcreates a buffer of the cleaning fluid on the semiconductor substrate and helps todampen the impact of the subsequent high pressure application of the cleaning fluid onthe semiconductor substrate.

申请人：Ching-Ya Wang,Ping Chuang,Yu-Liang Lin,Mei-Sheng Zhou,Henry Lo

地址：Hsin-Chu TW,Hsin-Chu TW,Hsin-Chu TW,Hsin-Chu TW,Hsin-Chu TW

国籍：TW,TW,TW,TW,TW

代理机构：Slater & Matsil, L.L.P.

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